BC847B-7

BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · Epitaxial Die Construction Complementary PNP Type Available (BC857AT,BT,CT) Ultra-Small Surface Mount Package C TOP VIEW B G H K M E A B SOT-523 Dim A C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 B C D G H J K L M Mechanical Data · · · · Case: SOT-523, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approx.) N J D L Type BC847A BC847B BC847C Marking 1E 1F 1M N 0.45 0.65 0.50 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Note 1) @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 50 45 6.0 100 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Ordering Information (Note 2) Device BC847AT-7 BC847BT-7 BC847CT-7 Notes: Packaging SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 1. Device mounted on FR-4 PC board with recommended pad layout. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30274 Rev. A-2 1 of 3 BC847AT, BT, CT Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min — — — 110 200 420 — — 580 — — 100 — — Typ — 150 270 — 290 520 — 700 900 660 — — — — — Max — — — 220 450 800 250 600 — 700 770 15 5.0 — 4.5 10 4.0 Unit Test Condition NEW PRODUCT Characteristic DC Current Gain (Note 3) Current Gain A B C Current Gain A B C Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current Gain Bandwidth Product Output Capacitance Noise Figure Notes: BC847BT BC847CT (Note 3) (Note 3) (Note 3) (Note 3) hFE — VCE = 5.0V, IC = 2.0mA mV mV mV nA µA MHz pF dB IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, RS = 2.0kW, f = 1.0kHz, BW = 200Hz VCE(SAT) VBE(SAT) VBE ICBO ICBO fT COBO NF 3. Short duration test pulse used to minimize self-heating effect. DS30274 Rev. A-2 2 of 3 BC847AT, BT, CT 250 (see Note 1) 1000 VCE = 5V 100 C NEW PRODUCT Pd, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN TA = 25 C 100 -50 C 150 100 10 50 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 0.5 1 200 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 1000 VCE, COLLECTOR SATURATION VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) IC / IB = 20 TA = 25 C 0.4 VCE = 10V 5V 2V 0.3 100 0.2 TA = 100 C 0.1 25 C -50 C 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current Notes: 1. Device mounted on FR-4 PC board with recommended pad layout. DS30274 Rev. A-2 3 of 3 BC847AT, BT, CT