BC847BLD
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
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Features
• • • • • • Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• • • • • • • • Case: SOT-23 Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
SOT-23
C 3
1
2
B E Schematic & Pin Configuration
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IEM Pd Pder Value 50 45 6 200 200 200 300 2.4 Unit V V V mA mA mA mW mW/°C
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - Continuous (Note 3) Peak Collector Current Peak Emitter Current Power Dissipation (Note 3) Power Deration
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage Junction Temperature Range
Notes:
Symbol RθJA Tj, TSTG
Value 417 -55 to +150
Unit °C/W °C
1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30824 Rev. 4 - 2
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BC847BLD
© Diodes Incorporated
Electrical Characteristics: NPN Transistor
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current (IBEX) Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4)
@TA = 25°C unless otherwise specified Min 50 45 6 — — — — — 180 150 220 220 150 150 — — 647 — — — — — — — 100 — Typ — — — — — — — — — — — — — — 0.09 0.2 657 — — 3 4.5 2 200 30 — — Max — — — 15 15 15 5 50 50 — — — — — — 0.18 0.4 667 0.8 0.9 — — — — — — 10 Unit V V V nA nA nA μA nA nA — — — — — — V V mV V V pF Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 50V, VEB(OFF) = 3.0V VCE = 40V, VEB(OFF) = 3.0V VCB = 40V, IE = 0 o VCB = 30V, TA = 150 C VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 100μA VCE = 5V, IC = 500μA VCE = 5V, IC = 1mA VCE = 5V, IC = 2mA VCE = 5V, IC = 5mA VCE = 5V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCB = 5.0V, f = 1.0 MHz, IE = 0
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL ICBO ICEO IEBO
DC Current Gain
hfe
Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure
Notes:
VCE(SAT) VBE(ON) VBE(SAT)
COBO hie hre hfe hoe fT NF
KΩ x 10E-4 VCE = 5.0V, IC = 2mA, f = 1.0KHz — μS VCE = 20V, IC = 10 mA, MHz f = 100 MHz VCE = 5V, IC = 100µA, dB RS = 1KΩ, f = 1kHz
4. Short duration pulse test used to minimize self-heating effect.
350 300 250 200 150 100 50 0 0 125 150 25 50 75 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Maximum Power Dissipation vs. Ambient Temperature 175
450 400 350
hFE, DC CURRENT GAIN
TA = 150°C VC E = 5V
PD, POWER DISSIPATION (mW)
T A = 125°C
300 250 200 150 100 50 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical hFE vs. IC 1,000
TA = 25°C
TA = 85°C
RθJA = 417 o C/W
T A = -55°C
DS30824 Rev. 4 - 2
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BC847BLD
© Diodes Incorporated
0.2 0.18 IC, COLLECTOR CURRENT (A) 0.16
Ib = 3mA Ib = 3.5mA Ib = 4mA Ib = 5mA Ib = 4.5mA
0.6
Ic/Ib=10
0.14 I = 2.5mA b 0.12 0.1 0.08 0.06 0.04
Ib 1.5mA Ib = 1mA Ib = 0.5mA
VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V)
0.5
0.4
0.3
TA = 150°C
0.2
TA = 125°C TA = 85°C
0.1
TA = 25°C TA = -55°C
0.02 0 1
Ib = 2mA
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 3 Typical IC vs. VCE
0 0.1
1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical VCE(SAT) vs. IC
1,000
VBE, BASE EMITTER VOLTAGE (V)
VCE = 1V
Ic/Ib=10
VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V)
TA = 25°C
TA = 25°C
T A = -55°C
TA = -55°C
TA = 150°C
TA = 150°C
TA = 125°C TA = 85°C
TA = 85°C T A = 125°C
0 0.1 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical VBE vs. IC 1,000
0 0.1
1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical VBE(SAT) vs. IC
1,000
Ordering Information
Device BC847BLD-7
Notes: 5.
(Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KLD = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
KLD
Date Code Key Year Code Month Code DS30824 Rev. 4 - 2
2006 T Jan 1
2007 U Feb 2 Mar 3
2008 V Apr 4
2009 W May 5
YM
2010 X Jun 6 3 of 4
2011 Y Jul 7
2012 Z Aug 8 Sep 9
2013 A Oct O
2014 B Nov N
2015 C Dec D BC847BLD
© Diodes Incorporated
www.diodes.com
Mechanical Details
A
BC
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 8° 0° α All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30824 Rev. 4 - 2
4 of 4 www.diodes.com
BC847BLD
© Diodes Incorporated