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BC847BS

BC847BS

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BC847BS - DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BC847BS 数据手册
BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features · · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package Dim A C2 B1 E1 SOT-363 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 °8 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 A B BC Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V - 0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1F (See Page 2) Weight: 0.006 grams Ordering & Date Code Information: See Page 2 C D F H J M 0.65 Nominal E2 B2 C1 G H K K L M a J D F L All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IBM Pd RqJA Tj, TSTG Value 50 45 5.0 100 200 200 200 500 -55 to +125 Unit V V V mA mA mA mW °C/W °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf. DS30222 Rev. 3 - 2 1 of 3 BC847BS Electrical Characteristics Characteristic DC Current Gain (Note 2) @ TA = 25°C unless otherwise specified Symbol hFE VCE(SAT) VBE(SAT) VBE ICBO ICBO IEBO fT CCBO CEBO Min 200 — — 580 — — 100 — — Typ — — — 755 665 — — — — — 11 Max 450 100 400 — 700 15 5.0 100 — 1.5 — Unit — mV mV mV nA µA nA MHz pF pF Test Condition VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA VCE = 5.0V, IC = 2.0mA VCB = 30V, IE = 0 VCB = 30V, Tj = 125°C VEB = 5.0V, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VEB = 0.5V, f = 1.0MHz Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Base-Emitter Voltage (Note 2) Collector Cutoff Current (Note 2) Emitter Cutoff Current (Note 2) Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Ordering Information Device BC847BS-7 (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel Notes: 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1F YM Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 YM K1F May 5 K1F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2001 M Jun 6 2002 N Jul 7 Aug 8 2003 P Sep 9 Oct O 2004 R Nov N Dec D DS30222 Rev. 3 - 2 2 of 3 BC847BS 250 (see Note 1) 1000 VCE = 5V 100°C Pd, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN TA = 25°C 100 -50°C 150 100 10 50 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 0.5 1 200 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 1000 VCE, COLLECTOR SATURATION VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) IC / IB = 20 TA = 25°C 0.4 VCE = 10V 5V 2V 0.3 100 0.2 TA = 100°C 0.1 25°C 0 0.1 1.0 -50°C 10 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current Notes: 1. Device mounted on FR4 printed circuit board. DS30222 Rev. 3 - 2 3 of 3 BC847BS
BC847BS 价格&库存

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免费人工找货
BC847BS-7-F
  •  国内价格
  • 10+0.21573
  • 100+0.21249
  • 600+0.13931
  • 1200+0.13722
  • 3000+0.11825

库存:3000