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BC847BS_2

BC847BS_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BC847BS_2 - DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BC847BS_2 数据手册
BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Ideally Suited for Automated Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4 and 5) A SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° B C D Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: K1F, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams K 0.65 Nominal H M F H J K D F L J C2 B1 L M α E1 All Dimensions in mm E2 B2 C1 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Power Dissipation @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM IBM (Note 1) (Note 1) Pd RθJA Tj, TSTG Value 50 45 5.0 100 200 200 200 500 -65 to +150 Unit V V V mA mA mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Cutoff Current Emitter Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Notes: @TA = 25°C unless otherwise specified Symbol (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) hFE VCE(SAT) VBE(SAT) VBE ICBO ICBO IEBO fT CCBO CEBO Min 200 — — 580 — — 100 — — Typ — — — 755 665 — — — — 2.0 11 Max 450 100 400 — 700 15 5.0 100 — 3.0 — Unit — mV mV mV nA µA nA MHz pF pF Test Condition VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA VCE = 5.0V, IC = 2.0mA VCB = 30V, IE = 0 VCB = 30V, Tj = 125°C VEB = 5.0V, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VEB = 0.5V, f = 1.0MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30222 Rev. 12 - 2 1 of 3 www.diodes.com BC847BS © Diodes Incorporated 250 1,000 Pd, POWER DISSIPATION (mW) 200 hFE, DC CURREN T GAIN 100 150 100 10 50 0 0 120 40 80 160 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 200 1 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.5 VCE, COLLECTOR SATURATION VOLTAGE (V) 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = 25° C 0.4 VCE = 10V 5V 2V 0.3 100 0.2 0.1 0 0.1 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Gain Bandwidth Product vs. Collector Current 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector Saturation Voltage vs, Collector Current Ordering Information Device BC847BS-7-F Notes: 6. (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K1F YM Date Code Key Year Code Month Code DS30222 Rev. 12 - 2 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 YM K1F 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2 of 3 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BC847BS © Diodes Incorporated www.diodes.com IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30222 Rev. 12 - 2 3 of 3 www.diodes.com BC847BS © Diodes Incorporated
BC847BS_2
1. 物料型号: - 型号:BC847BS - 描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR(双NPN小信号表面贴装晶体管)

2. 器件简介: - 特点:适合自动插入、开关和AF放大器应用、超小型表面贴装封装、无铅/RoHS合规、符合AEC-Q101标准的高可靠性、“绿色”器件。 - 封装:SOT-363,塑封,UL可燃性分类等级94V-0,湿度敏感性等级1(依据J-STD-020C),终端可焊性符合MIL-STD-202方法208,无铅镀层(亚锡钝化合金42铅框架)。

3. 引脚分配: - 引脚连接图见PDF文档中的图表部分。

4. 参数特性: - 最大额定值:包括集电极-基极电压(VCBO 50V)、集电极-发射极电压(VCEO 45V)、发射极-基极电压(VEBO 5.0V)、集电极电流(Ic 100mA)、峰值集电极电流(ICM 200mA)、峰值基极电流(IBM 200mA)、功率耗散(Pd 200mW)、热阻(RJA 500°C/W)、工作和存储温度范围(-65至+150°C)。 - 电气特性:包括直流电流增益(hFE 200至450)、集电极-发射极饱和电压(VCE(SAT) 100至400mV)、基极-发射极饱和电压(VBE(SAT) 0.75至0.85V)、基极-发射极电压(VBE 0.58至0.70V)、集电极截止电流(ICBO 0至15nA)、发射极截止电流(IEBO 0至100nA)、增益带宽积(fT 100MHz)、集电极-基极电容(CCBO 2.0至3.0pF)、发射极-基极电容(CEBO 0至11pF)。

5. 功能详解: - 该器件为双NPN小信号表面贴装晶体管,适用于自动插入、开关和音频频率放大器应用。

6. 应用信息: - 应用:开关和音频放大器。

7. 封装信息: - 封装类型:SOT-363,3000/卷带和卷盘包装。
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