BC847BVN-7

SPICE MODEL: BC847BVN Lead-free Green BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • • • • • • • Epitaxial Die Construction Two internally isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) E1 B1 C2 A C1 B2 E2 SOT-563 BC KAW YM D G Dim A B C D G Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20  Mechanical Data Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish  Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 3): KAW Ordering & Date Code Information: See Page 4 Weight: 0.003 grams (approximate) Q1 C1 B2 K H M H K L L M E2 All Dimensions in mm Q2 E1 B1 C2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current @ TA = 25°C unless otherwise specified NPN, BC847B Type (Q1) Value 50 45 6.0 100 200 200 Unit V V V mA mA mA VCBO VCEO VEBO IC ICM IEM Characteristic Symbol Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current @ TA = 25°C unless otherwise specified PNP, BC857B Type (Q2) Symbol VCBO VCEO VEBO IC ICM IEM Value -50 -45 -5.0 -100 -200 -200 Unit V V V mA mA mA Characteristic Thermal Characteristics Characteristic Power Dissipation (Note 1) @TA = 25oC Operating and Storage Temperature Range Notes: Symbol Total Device Pd RθJA Tj, TSTG Value 150 833 -65 to +150 Unit mW °C/W °C Thermal Resistance, Junction to Ambient (Note 1) @TA = 25oC 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30627 Rev. 4 - 2 1 of 4 www.diodes.com BC847BVN © Diodes Incorporated Electrical Characteristics Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Note: @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT CCBO Min 50 45 6 200 — — 580 — — — 100 — Typ — — — 290 90 200 700 900 660 — — — 300 3.5 NPN, BC847B Type (Q1) Max — — — 450 250 600 — 700 720 15 5.0 — 6.0 Unit V V V — mV mV mV nA µA MHz pF Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect. 1000 VCE, COLLECTOR SATURATION VOLTAGE (V) VCE = 5V 100° C 0.5 IC IB = 20 0.4 hFE, DC CURRENT GAIN TA = 25° C 100 -50° C 0.3 0.2 TA = 100° C 10 0.1 TA = 25° C 1 0.01 0.1 1.0 10 100 0 0.1 1.0 TA = -50° C 10 100 IC, COLLECTOR CURRENT (mA) Fig. 1, DC Current Gain vs Collector Current (BC847B Type) IC, COLLECTOR CURRENT (mA) Fig. 2, Collector-Emitter Saturation Voltage vs Collector Current (BC847B Type) 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = 25° C 16 14 VCE = 10V f = 1MHz VCE =5V VCE = 2V CAPACITANCE (pF) 12 10 8 6 4 Cobo 2 Cibo 100 10 0.1 1.0 10 100 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Fig. 4, Capacitance vs. Reverse Voltage (BC847B Type) IC, COLLECTOR CURRENT (mA) Fig. 3, Gain Bandwidth Product vs Collector Current (BC847B Type) DS30627 Rev. 4 - 2 2 of 4 www.diodes.com BC847BVN Electrical Characteristics Characteristic (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Note: @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT CCBO Min -50 -45 -5 220 — — -600 — — — 100 — Typ — — — 290 -75 -250 -700 -850 -650 — — — 200 3 PNP, BC857B Type (Q2) Max — — — 475 -300 -650 — -950 -750 -820 -15 -4.0 — 4.5 Unit V V V — mV mV mV nA µA MHz pF Test Condition IC = -10µA, IB = 0 IC = -10mA, IB = 0 IE = -1µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE =- 5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz 5. Short duration pulse test used to minimize self-heating effect. -1000 TA = 150°C -0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE = 5V IC IB = 10 -0.4 hFE, DC CURRENT GAIN -100 TA = 25°C TA = -50°C -0.3 -0.2 TA = 150°C TA = 25°C -10 -0.1 TA = -50°C -1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs. Collector Current (BC857B Type) 0 -0.1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector-Emitter Saturation Voltage vs. Collector Current (BC857B Type) 20 -1000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = -5V 18 16 CAPACITANCE (pF) 14 12 10 Cibo 8 6 4 2 f = 1MHz -100 Cobo -10 -1 -10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B Type) -100 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Fig. 8, Capacitance vs. Reverse Voltage (BC857B Type) DS30627 Rev. 4 - 2 3 of 4 www.diodes.com BC847BVN 200 Pd, TOTAL POWER DISSIPATION (mW) 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9, Derating Curve - Total Device Ordering Information Device BC847BVN-7 Notes: (Note 6) Packaging SOT-563 Shipping 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAW YM Date Code Key Year Code Month Code 2004 R Jan 1 2005 S Feb 2 2006 T March 3 Apr 4 KAW = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September 2007 U May 5 2008 V Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30627 Rev. 4 - 2 4 of 4 www.diodes.com BC847BVN