BC847CDLP-7

BC847CDLP NPN DUAL SURFACE MOUNT TRANSISTOR N EW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Low Profile Package B C C E B E DFN1310H4-6 Dim A B C Min 1.25 0.95 0.20 0 0.10 0.30 Max 1.38 1.08 0.30 0.40 0.05 0.20 0.50 Typ 1.30 1.00 0.25 0.10 0.20 0.02 0.15 0.40 0.35 0.25 0.05 Mechanical Data • • Case: DFN1310H4-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe (Lead Free Plating). Solderable per MILSTD-202, Method 208 C Marking Code Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0015g (approximate) G H Top View D* Side View Z K L E** G H K* L • • • • • B E B R0 N ot .1 50 e4 E N L* C M** N* Z** E C B Internal Schematic (TOP VIEW) D D N A M Z All Dimensions in mm * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X Bottom View Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Note 3) @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 50 45 6.0 100 350 357 -65 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB pad layout as shown on page 4. Radiused pad feature is intended for device manufacturing control and should not be considered as a polarity indicator, or to suggest orientation of the devices in the carrier tape. DS30817 Rev. 6 - 2 1 of 4 www.diodes.com BC847CDLP © Diodes Incorporated Electrical Characteristics N EW PRODUCT Characteristic @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICES ICBO ICBO fT CCBO Min 50 45 6 420 ⎯ ⎯ 580 ⎯ ⎯ ⎯ ⎯ 100 ⎯ Typ ⎯ ⎯ ⎯ 650 55 130 700 900 660 ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 Max ⎯ ⎯ ⎯ 800 250 600 ⎯ 700 770 15 15 5.0 ⎯ ⎯ Unit V V V ⎯ mV mV mV nA nA µA MHz pF Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCE = 50V VCB = 30V VCE = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1MHz Collector-Base Breakdown Voltage (Note 5) Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage (Note 5) DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Base-Emitter Saturation Voltage (Note 5) Base-Emitter Voltage (Note 5) Collector-Cutoff Current (Note 5) Gain Bandwidth Product Collector-Base Capacitance Notes: 3. Device mounted on FR-5 PCB pad layout as shown on page 4. 5. Short duration test pulse used to minimize self-heating effect. 350 300 PD, POWER DISSIPATION (mW) 0.25 0.20 250 200 150 100 50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Dissipation vs. Ambient Temperature (Note 3) IC, COLLECTOR CURRENT (A) 0.15 0.10 0.05 0.00 0 1 2 3 4 5 6 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector Emitter Voltage DS30817 Rev. 6 - 2 2 of 4 www.diodes.com BC847CDLP © Diodes Incorporated 1400 VCE = 5V 1200 hFE, DC CURRENT GAIN 1000 800 600 400 TA = -55°C 200 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current 0.1 TA = 150°C 0.25 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) N EW PRODUCT 0.20 0.15 TA = 85°C TA = 25°C 0.10 0.05 0.00 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector Emitter Saturation Voltage vs. Collector Current 1.2 1.0 0.9 VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.01 0.1 1 10 100 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0.0 0.01 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base Emitter Turn-On Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Typical Base Emitter Saturation Voltage vs. Collector Current 14 f = 1MHz 12 10 CAPACITANCE (pF) 8 6 4 2 0 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) Fig. 7, Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 300 250 200 150 100 50 20 40 70 30 50 60 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Gain-Bandwidth Product vs. Collector Current 0 0 10 DS30817 Rev. 6 - 2 3 of 4 www.diodes.com BC847CDLP © Diodes Incorporated Ordering Information (Note 6) N EW PRODUCT Device BC847CDLP-7 Notes: Package DFN1310H4-6 Shipping 3000/Tape & Reel 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Note 7) 1M (TOP VIEW) 1M = Product Type Marking Code Note: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated or mixed (both ways). Suggested Pad Layout X3 a X Y b Y2 Y1 DFN1310H4-6 Dim Value X 0.52 Y 0.52 X1 0.20 Y1 0.375 X2 0.17 Y2 0.16 X3 0.15 a 0.09 b 0.06 All Dimensions in mm X2 X1 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30817 Rev. 6 - 2 4 of 4 www.diodes.com BC847CDLP © Diodes Incorporated