BC847PN_1

SPICE MODEL: BC847PN Pb Lead-free BC847PN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability C1 SOT-363 A B2 E2 Dim A BC Min 0.10 1.15 2.00 0.30 1.80  0.90 0.25 0.10 8° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 B C D F H M Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 3): K7P Ordering Information: See Page 2 Weight: 0.006 grams (approximate) @ TA = 25°C unless otherwise specified J D F K E1 B1 C2 0.65 Nominal G H J K L M α L All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current NPN BC847B Section Value 50 45 6.0 100 200 200 Unit V V V mA mA mA VCBO VCEO VEBO IC ICM IEM Characteristic Symbol Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current @ TA = 25°C unless otherwise specified PNP BC857B Section Symbol VCBO VCEO VEBO IC ICM IEM Value -50 -45 -5.0 -100 -200 -200 Unit V V V mA mA mA Characteristic Thermal Characteristics Characteristic Power Dissipation (Note 1) @ TA = 25°C Total Device Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C Operating and Storage Temperature Range Symbol Pd RθJA Tj, TSTG Value 200 625 -65 to +150 Unit mW °C/W °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30278 Rev. 8 - 2 1 of 4 www.diodes.com BC847PN © Diodes Incorporated Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO ICBO fT CCBO NF Min 50 45 6 200 — — 580 — — — 100 — — Typ — — — 290 90 200 700 900 660 — — — 300 3.5 2.0 NPN BC847B Section Max — — — 450 250 600 — 700 720 15 5.0 — 6.0 10 Unit V V V — mV mV mV nA µA MHz pF dB Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, ∆f = 200Hz Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO ICBO fT CCBO NF Min -50 -45 -5 220 — — -600 — — — 100 — — Typ — — — 290 -75 -250 -700 -850 -650 — — — 200 3 — PNP BC857B Section Max — — — 475 -300 -650 — -950 -750 -820 -15 -4.0 — 4.5 10 Unit V V V — mV mV mV nA µA MHz pF dB Test Condition IC = 10µA, IB = 0 IC = 10mA, IB = 0 IE = 1µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, ∆f = 200Hz Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Ordering Information Device BC847PN-7-F (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel Notes: 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30278 Rev. 8 - 2 2 of 4 www.diodes.com BC847PN Marking Information K7P K7P = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code 2001 M Month Code 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 2006 T May 5 Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D 250 (see Note 1) YM 1000 VCE = 5V TA = 100° C Pd, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN TA = 25° C 100 TA = -50° C 150 100 10 50 0 0 40 80 120 160 200 1 0.01 0.1 1.0 10 100 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Power Derating Curve (Total Device) 0.5 IC / IB = 20 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current (BC847B) 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = 25° C VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.4 VCE = 10V VCE = 5V VCE = 2V 0.3 100 0.2 TA = 100° C 0.1 TA = 25° C 0 0.1 1.0 TA = -50° C 10 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current (BC847B) IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current (BC847B) DS30278 Rev. 8 - 2 3 of 4 www.diodes.com BC847PN 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 1000 TA = 150°C VCE = 5V 0.4 hFE, DC CURRENT GAIN 0.3 100 TA = 25°C TA = -50°C 0.2 TA = 25°C TA = 150°C 10 0.1 TA = -50°C 0 0.1 1 10 100 1000 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, DC Current Gain vs. Collector Current (BC857B) IC, COLLECTOR CURRENT (mA) Fig. 5, Collector Emitter Saturation Voltage vs. Collector Current (BC857B) 1000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30278 Rev. 8 - 2 4 of 4 www.diodes.com BC847PN