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BC857AT_2

BC857AT_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BC857AT_2 - PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BC857AT_2 数据手册
BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Die Construction Complementary NPN Types Available (BC847AT,BT,CT) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4 and 5) A C TOP VIEW B G H K M E BC SOT-523 Dim A B C D G H N Min 0.15 0.75 1.45 ⎯ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ⎯ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ⎯ Mechanical Data • • • • • • • • • Case: SOT-523 Case Material - Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Code: See Table Below & Diagram on Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approximate) J K L M N α J D L Type BC857AT BC857BT BC857CT Marking 3V 3W 3G All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value -50 -45 -5.0 -100 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range (Note 1) (Note 1) Electrical Characteristics @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT COB NF Min -50 -45 -5 125 220 420 — — — -600 — — — 100 — — Typ — — — — 290 520 — — -700 -900 — — — — — — — Max — — — 250 475 800 -300 -650 — — -750 -820 -15 -4.0 — 4.5 10 Unit V V V — mV mV mV NA µA MHz pF dB Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz Characteristic Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Current Gain A B C Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Output Capacitance Noise Figure Notes: (Note 3) (Note 3) (Note 3) (Note 3) 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30275 Rev. 9 - 2 1 of 3 www.diodes.com BC857AT, BT, CT © Diodes Incorporated 250 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 IC IB = 10 PD, POWER DISSIPATION (mW) 200 0.4 150 0.3 100 0.2 TA = 150°C T A = 25°C 50 0.1 T A = -50°C 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature T A = 150°C VCE = 5V 200 0 0.1 1,000 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1,000 1,000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V hFE, DC CURRENT GAIN 100 TA = 25°C TA = -50°C 100 10 1 1 10 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs. Collector Current 1 Ordering Information (Note 6) Device BC857AT-7-F BC857BT-7-F BC857CT-7-F Notes: Packaging SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXYM Date Code Key Year Code Month Code DS30275 Rev. 9 - 2 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2 of 3 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BC857AT, BT, CT © Diodes Incorporated www.diodes.com IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30275 Rev. 9 - 2 3 of 3 www.diodes.com BC857AT, BT, CT © Diodes Incorporated
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