BC857BLP
50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• • • • • • Epitaxial Die Construction Complementary NPN Type Available (BC847BLP) Ultra-Small Leadless Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0009 grams
DFN1006-3
B
C
B C
E
E
Top View Pin-Out
Bottom View
Device Symbol
Ordering Information (Note 3)
Product BC857BLP-7 BC857BLP-7B
Notes:
Marking 3W 3W
Reel size (inches) 7 7
Tape width (mm) 8mm 8mm
Quantity per reel 3,000 10,000
1. No purposefully added lead. 2. Halogen and Antimony Free. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BC857BLP-7
BC857BLP-7B
3W
Top View Dot Denotes Collector Side
3W
Top View Bar Denotes Base and Emitter Side
3W = Product Type Marking Code
BC857BLP
Document number: DS30526 Rev. 10 - 2
1 of 4 www.diodes.com
February 2011
© Diodes Incorporated
BC857BLP
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -50 -45 -5.0 -100 Unit V V V mA
Thermal Characteristics
Characteristic Power Dissipation (Note 4) @TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance
Notes:
Symbol BVCBO BVCEO BVEBO hFE VCE(sat) VBE(sat) VBE(on) ICBO fT CCBO
Min -50 -45 -5 220 — — — -600 — — — 100 —
Typ — — — 260 -90 -250 -700 -850 -670 -710 — — — 3.0
Max — — — 475 -300 -650 — — -750 -820 -15 -4.0 — —
Unit V V V — mV mV mV nA µA MHz pF
Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz
4. Device mounted on FR-4 PCB, Diodes Inc. suggested pad layout document can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect.
300
PD, POWER DISSIPATION (mW)
250
200
150
100
50
RθJA = 500 °C/W
0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) 150
hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current
BC857BLP
Document number: DS30526 Rev. 10 - 2
2 of 4 www.diodes.com
February 2011
© Diodes Incorporated
BC857BLP
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (mV)
350 300 250 200 150 100 50 0 1
V(CE)SAT, COLLECTOR-EMITTER SATURATION VOLTAGE (mV)
TA = -55ºC
TA = 25ºC TA = 85ºC
TA = 150ºC TA = 125ºC
VCE = 5V
10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current
V(BE)SAT, BASE-EMITTER SATURATION VOLTAGE (V)
1
10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current
Package Outline Dimensions
A
A1 D
b1 E b2 e
DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm
L2
L3
L1
BC857BLP
Document number: DS30526 Rev. 10 - 2
3 of 4 www.diodes.com
February 2011
© Diodes Incorporated
BC857BLP
Suggested Pad Layout
C X1 X G2
G1 Y Z
Dimensions Z G1 G2 X X1 Y C
Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com
BC857BLP
Document number: DS30526 Rev. 10 - 2
4 of 4 www.diodes.com
February 2011
© Diodes Incorporated