0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC857BLP_1

BC857BLP_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BC857BLP_1 - PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BC857BLP_1 数据手册
BC857BLP PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Die Construction Complementary NPN Type Available (BC847BLP) Ultra-Small Leadless Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 1 E C B 3 Mechanical Data • • • • • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections Indicator: Collector Dot Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 3 Marking Information: See Page 3 Weight: 0.0009 grams 2 BOTTOM VIEW TOP VIEW (Internal Schematic) DFN1006-3 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value -50 -45 -5.0 -100 Unit V V V mA Characteristic Thermal Characteristics Characteristic Power Dissipation (Note 3) @TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA Tj, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO fT CCBO Min -50 -45 -5 220 — — — -600 — — — 100 — Typ — — — 260 -90 -250 -700 -850 -670 -710 — — — 3.0 Max — — — 475 -300 -650 — — -750 -820 -15 -4.0 — — Unit V V V — mV mV mV nA µA MHz pF Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. DS30526 Rev. 9 - 2 1 of 3 www.diodes.com BC857BLP © Diodes Incorporated 300 350 V(CE)SAT, COLLECTOR TO EMITTER SATURATION VOLTAGE (mV) 150 PD, POWER DISSIPATION (mW) 250 300 250 200 150 100 50 0 1 200 150 100 50 RθJA = 500 °C/W 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current V(BE)SAT, BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER ON VOLTAGE (mV) TA = -55ºC TA = 25ºC TA = 85ºC TA = 150ºC TA = 125ºC VCE = 5V 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current DS30526 Rev. 9 - 2 2 of 3 www.diodes.com BC857BLP © Diodes Incorporated Ordering Information Device BC857BLP-7 Notes: 5. (Note 5) Packaging DFN1006-3 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 3W = Product Type Marking Code Dot Denotes Collector, Pin 3 Mechanical Details G H A K BC M D N L DFN1006-3 Dim Min Max Typ A 0.95 1.075 1.00 B 0.55 0.675 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 H 0 0.05 0.03 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M 0.35 ⎯ ⎯ N 0.40 ⎯ ⎯ All Dimensions in mm Suggested Pad Layout C X1 X G2 Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z G1 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30526 Rev. 9 - 2 3 of 3 www.diodes.com BC857BLP © Diodes Incorporated
BC857BLP_1 价格&库存

很抱歉,暂时无法提供与“BC857BLP_1”相匹配的价格&库存,您可以联系我们找货

免费人工找货