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BC858

BC858

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BC858 - PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BC858 数据手册
SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • • • Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) For Switching and AF Amplifier Applications Lead Free/RoHS Compliant (Note 3) SOT-23 Dim A B C D E G H J K L M α Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° • Mechanical Data • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Pin Connections: See Diagram Marking Codes: See Table Below & Diagram on Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) • All Dimensions in mm Marking Code (Note 2) Type BC856A BC856B BC857A BC857B Marking 3A, K3A 3B, K3B 3E, K3V, K3A 3F, K3W, K3B Type BC857C BC858A BC858B BC858C Marking 3G, K3G 3J, K3J, K3A, K3V 3K, K3K, K3B, K3W 3L, K3L, K3G Maximum Ratings Collector-Base Voltage @TA = 25°C unless otherwise specified Symbol BC856 BC857 BC858 BC856 BC857 BC858 VCBO Value -80 -50 -30 -65 -45 -30 -5.0 -100 -200 -200 300 417 -65 to +150 Unit V Characteristic Collector-Emitter Voltage VCEO VEBO IC ICM IEM Pd RθJA Tj, TSTG V V mA mA mA mW °C/W °C Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Current gain subgroup “C” is not available for BC856. No purposefully added lead. DS11207 Rev. 18 - 2 1 of 4 www.diodes.com BC856A-BC858C © Diodes Incorporated Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol BC856 BC857 BC858 BC856 BC857 BC858 V(BR)CBO Min -80 -50 -30 -65 -45 -30 -5 — — — — — — — — — — — — 125 220 420 — — — -600 — — — — — — 100 — — Typ — — — — — — — 200 330 600 2.7 4.5 8.7 18 30 60 -4 1.5x10 -4 2x10 -4 3x10 180 290 520 -75 -250 -700 -850 -650 — — — — — — 200 3 2 Max — — — — — — — — — — — — — — — — — — — 250 475 800 -300 -650 — -750 -820 -15 -15 -15 -15 -4.0 — — 10 Unit V Test Condition IC = 10μA, IB = 0 B Collector-Base Breakdown Voltage (Note 4) Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO V(BR)EBO hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre hFE VCE(SAT) VBE(SAT) VBE(ON) V V — — — kΩ kΩ kΩ µS µS µS — — — — mV mV mV nA nA nA nA µA MHz pF dB IC = 10mA, IB = 0 B Emitter-Base Breakdown Voltage (Note 4) H-Parameters Small Signal Current Gain Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C IE = 1μA, IC = 0 Input Impedance VCE = -5.0V, IC = -2.0mA, f = 1.0kHz Output Admittance Reverse Voltage Transfer Ratio DC Current Gain (Note 4) VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA B B Collector-Emitter Saturation Voltage (Note 4) Base-Emitter Saturation Voltage (Note 4) Base-Emitter Voltage (Note 4) Collector-Cutoff Current (Note 4) BC856 BC857 BC858 IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA B B VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCE = -80V VCE = -50V VCE = -30V VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz VCE = -5.0V, IC = 200µA, RS = 2kΩ, f = 1kHz, Δf = 200Hz ICES ICES ICES ICBO ICBO fT CCBO NF Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 4. Short duration pulse test used to minimize self-heating effect. DS11207 Rev. 18 - 2 2 of 4 www.diodes.com BC856A-BC858C © Diodes Incorporated DS11207 Rev. 18 - 2 3 of 4 www.diodes.com BC856A-BC858C © Diodes Incorporated Ordering Information (Note 5) Device* BC85xx-7-F * Notes: 5. xx = device type, e.g. BC856A-7-F. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Packaging SOT-23 Shipping 3000/Tape & Reel Marking Information XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS11207 Rev. 18 - 2 4 of 4 www.diodes.com BC856A-BC858C © Diodes Incorporated
BC858
物料型号: - BC856A、BC856B、BC857A、BC857B、BC858A、BC858B、BC858C

器件简介: - 这些是PNP型表面贴装小信号晶体管,适合自动插入安装,有相应的NPN型号(BC846-BC848)可用,适用于开关和音频放大器应用,无铅/符合RoHS标准。

引脚分配: - 采用SOT-23封装,引脚排列见图示。

参数特性: - 机械数据:SOT-23封装,塑料模塑外壳,UL可燃性分类等级94V-0,湿度敏感性等级1(依据J-STD-020C),引脚可焊性符合MIL-STD-202方法208,无铅镀层(亚锡表面处理覆盖在合金42的引线上)。 - 最大额定值:包括集电极-基极电压、集电极-发射极电压、发射极-基极电压、集电极电流、峰值集电极电流、峰值发射极电流和功率耗散等。 - 热阻:结到环境的热阻为417°C/W。 - 工作和存储温度范围:-65°C至+150°C。

功能详解: - 电气特性:包括击穿电压、H参数、小信号电流增益、输入阻抗、输出电导、反向电压传输比、直流电流增益等。 - 特殊特性:包括集电极-发射极饱和电压、基极-发射极饱和电压、基极-发射极电压(开启时)、集电极截止电流、增益带宽积、集电极-基极电容和噪声系数。

应用信息: - 这些晶体管适用于需要PNP小信号晶体管的应用场合,如开关和音频放大器。

封装信息: - 提供SOT-23封装,具体包装细节可参考Diodes公司网站提供的文档AP02007。
BC858 价格&库存

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BC858B
  •  国内价格
  • 5+0.04249
  • 20+0.03874
  • 100+0.03499
  • 500+0.03125
  • 1000+0.0295
  • 2000+0.02825

库存:1720

BC858C
  •  国内价格
  • 1+0.04614
  • 100+0.04336
  • 300+0.04059
  • 500+0.03781
  • 2000+0.03642
  • 5000+0.03558

库存:20

BC858C-7-F
  •  国内价格
  • 1+0.14977
  • 10+0.13824
  • 30+0.13594
  • 100+0.12903

库存:404

BC858BLT1G
  •  国内价格
  • 5+0.1685
  • 20+0.15573
  • 100+0.14297
  • 500+0.1302
  • 1000+0.12425
  • 2000+0.11999

库存:320

BC858ALT1G
    •  国内价格
    • 5+0.13461
    • 20+0.13214
    • 100+0.1272

    库存:0

    LBC858ALT1G
      •  国内价格
      • 1+0.063
      • 30+0.06075
      • 100+0.0585
      • 500+0.054
      • 1000+0.05175
      • 2000+0.0504

      库存:2840