BCP56

BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • • • • • • • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE(sat) < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction Complementary PNP types: BCP51, 52 and 53 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Devices (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound (Note 2) UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) Applications • • Medium Power Switching or Amplification Applications AF driver and output stages SOT223 C E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 3) Product BCP54TA BCP5410TA BCP5416TA BCP55TA BCP5510TA BCP5516TA BCP56TA BCP5610TA BCP5616TA BCP5616TC Notes: Marking BCP 54 BCP 5410 BCP 5416 BCP 55 BCP 5510 BCP 5516 BCP 56 BCP 5610 BCP 5616 BCP 5616 Reel size (inches) 7 7 7 7 7 7 7 7 7 13 Tape width (mm) 12 12 12 12 12 12 12 12 12 12 Quantity per reel 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 4,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website http://www.diodes.com Marking Information BCP xxxx BCP = Product Type Marking Code, Line 1. XXXX = Product Type Marking Code, Line 2 as follows: BCP54 = 54 BCP5410 = 5410 BCP5416 = 5416 BCP55 = 55 BCP5510 = 5510 BCP5516 = 5516 BCP56 = 56 BCP5610 = 5610 BCP5616 = 5616 BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 1 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM BCP54 45 45 BCP55 60 60 5 1 2 100 200 BCP56 100 80 Unit V V V A mA Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Leads (Note 5) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG Value 2 62 19.4 -65 to +150 Unit W °C/W °C/W °C 4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 2 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 Thermal Characteristics Thermal Resistance (°C/W) 160 60 50 40 30 20 10 0 100µ 1m 10m 100m 1 D=0.2 Single Pulse D=0.05 D=0.1 Maximum Power (W) 50mm x 50mm 1oz Cu Tamb = 25°C 140 120 100 80 60 40 20 0 100µ 1m 10m 100m 50mm x 50mm 1oz Cu Tamb = 25°C Single pulse D=0.5 10 100 1k 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) 2.0 1.5 1.0 0.5 0.0 50mm x 50mm 1oz Cu Pulse Power Dissipation 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 3 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current All versions Static Forward Current Transfer Ratio (Note 6) 10 gain grp 16 gain grp Collector-Emitter Saturation Voltage (Note 6) Base-Emitter Turn-On Voltage (Note 6) Transition Frequency Output Capacitance Notes: Symbol BCP54 BCP55 BCP56 BCP54 BCP55 BCP56 BVCBO BVCEO BVEBO ICBO IEBO Min 45 60 100 45 60 80 5 25 40 25 63 100 150 - Typ - Max - Unit V Test Condition IC = 100µA - 0.1 20 20 250 160 250 0.5 1.0 25 V V µA IC = 10mA IE = 10µA VCB = 30V VCB = 30V, TA = 150°C VEB = 4V IC = 5mA, VCE = 2V IC = 150mA, VCE = 2V IC = 500mA, VCE = 2V IC = 150mA, VCE = 2V IC = 150mA, VCE = 2V IC = 500mA, IB = 50mA IC = 500mA, VCE = 2V IC = 50mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz nA hFE VCE(sat) VBE(on) fT Cobo V V MHz pF 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 0.8 250 IC, COLLECTOR CURRENT (A) 200 hFE, DC CURRENT GAIN 0.6 150 0.4 100 0.2 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage 0 0.001 1 10 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 4 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 0.4 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1.0 0.3 0.8 0.6 0.2 0.4 0.1 0.2 0 0.0001 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 140 1.0 120 CAPACITANCE (pF) 100 80 60 40 20 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 300 fT, GAIN-BANDWIDTH PRODUCT (MHz) 250 200 150 100 VCE = 5V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 5 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 Package Outline Dimensions A A1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout X1 Y1 C1 Y2 C2 X2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 6 of 7 www.diodes.com June 2011 © Diodes Incorporated BCP 54 / 55 / 56 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com BCP 54 / 55 / 56 Datasheet Number: DS35367 Rev. 2 – 2 7 of 7 www.diodes.com June 2011 © Diodes Incorporated