BS107

BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) @ TA = 25°C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG D BOTTOM VIEW C C D E G H SG D H G H All Dimensions in mm Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage Characteristic Value 200 200 ±20 120 830 -55 to +150 Unit V V V mA mW °C Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF @ TA = 25°C unless otherwise specified Symbol V(BR)DSS IGSS IDSS IDSX VGS(th) rDS(ON) RqJA Ciss Coss Crss ton toff Min 200 — — — — — — — Typ 230 — — 1.8 18 — 58 8.0 1.5 5.0 15 Max — 10 30 1.0 3 28 150 — — Unit V nA nA µA V W K/W pF ns Test Condition ID = 100µA, VGS = 0 VGS = 15V, VDS = 0 VDS =130V, VGS = 0 VDS = 70V, VGS = 0.2V VGS = VDS, ID = 1.0mA VGS = 2.8V, ID = 20 mA (Note 1) VDS = 20V, VGS = 0,f =1.0MHz VGS = 10V, VDS = 10V, RD = 100W Value 0.5 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.5A, Tj = 25°C Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance Thermal Resistance, Junction to Ambient Air Input Capacitance Output Capacitance Feedback Capacitance Turn On Time Turn Off Time Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80µs, duty factor = 1%. DA21804 Rev. C-3 1 of 2 BS107 1 500 ID (ON), DRAIN ON-CURRENT (mA) See Note 2 TA = 25°C Pd, POWER DISSIPATION (W) 0.8 (See Note 1) 400 VGS = 4.0V 0.6 300 3.5 0.4 200 3.0 0.2 100 2.5 2.0 0 0 100 TA, AMBIENT TEMPERATURE (ºC) Fig. 1. Power Derating Curve 200 0 0 20 40 60 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics 500 ID(ON), DRAIN ON-CURRENT (mA) (See Note 2) TA = 25°C 1.0 (See Note 2) VDS = 25V TA = 25°C 400 VGS = 4V 0.8 ID, DRAIN CURRENT (A) 300 3.5V 0.6 200 3V 0.4 100 2.5V 0.2 0 0 2 4 6 2V 0 10 8 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage gfs, FORWARD TRANSCONDUCTANCE (mm) gf s, FORWARD TRANSCONDUCTANCE (mm) 500 VDS = 25V See Note 2 500 (See Note 2) VDS = 25V 400 400 300 300 200 200 100 100 0 0 1 2 3 4 5 0 0 100 200 ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current VGS, GATE-SOURCE VOLTAGE (VOLTS) Fig. 5. Transconductance vs Gate-Source Voltage DA21804 Rev. C-3 2 of 2 BS107