BS870_

SPICE MODEL: BS870 BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2) G TOP VIEW S E D G H K J L D B C A SOT-23 Dim A B C D E M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data · · · · · · · · · Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K70 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) G H J K L M a Drain Gate All Dimensions in mm Source Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BS870 60 60 ±20 250 300 417 -55 to +150 Units V V V mA mW K/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS11302 Rev. 11 - 2 1 of 4 www.diodes.com BS870 ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ¾ ¾ 1.0 ¾ ¾ 80 ¾ ¾ ¾ ¾ ¾ Typ 80 ¾ ¾ 2.0 3.5 1.0 ¾ 22 11 2.0 2.0 5.0 Max ¾ 0.5 ±10 3.0 5.0 0.5 ¾ 50 25 5.0 20 20 Unit V µA nA V W A mS pF pF pF ns ns VES = 10V, RL = 150W, VDS = 10V, RD = 100W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 100mA VDS = 25V, VGS = 0V VGS = ±15V, VDS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 0.2A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ordering Information Device BS870-7-F Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K70 K70 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS11302 Rev. 11 - 2 2 of 4 www.diodes.com YM BS870 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 7 10V Tj = 25° C ID, DRAIN-SOURCE CURRENT (A) 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 5 VGS = 5.0V 5.5V 0.6 4 3 VGS = 10V 5.0V 0.4 2 1 0 0.2 2.1V 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 1.5 VGS = 10V, ID = 0.5A 4 ID = 500mA ID = 50mA VGS = 5.0V, ID = 0.05A 1.0 3 2 0.5 1 0 -55 -30 -5 20 45 70 95 120 145 0 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (° C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 5, Max Power Dissipation vs Ambient Temperature DS11302 Rev. 11 - 2 3 of 4 www.diodes.com BS870 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS11302 Rev. 11 - 2 4 of 4 www.diodes.com BS870