BSS123

BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating G E NEW PRODUCT SOT-23 Dim A D Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° A B B C C D E G H M Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K23 (See Page 3) Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approx.) TOP VIEW S D G H K J L J K L M a Drain Gate All Dimensions in mm Source Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG BSS123 100 100 ±20 170 680 300 417 -55 to +150 Units V V V mA mW °C/W °C Characteristic Drain-Gate Voltage RGS £ 20KW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30366 Rev. 3 - 2 1 of 3 www.diodes.com BSS123 NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Rise Time Turn-Off Fall Time Turn-On Delay Time Turn-Off Delay Time Note: @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSSF VGS(th) RDS (ON) gFS VSD Ciss Coss Crss tr tf tD(ON) tD(OFF) Min 100 ¾ ¾ 0.8 ¾ ¾ 80 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ ¾ ¾ ¾ 1.4 ¾ ¾ 370 0.84 29 10 2 ¾ ¾ ¾ ¾ Max ¾ 1.0 10 50 2.0 6.0 10 ¾ 1.3 60 15 6 8 16 8 13 Unit V µA nA nA V W mS V pF pF pF ns ns ns ns VDD = 30V, ID = 0.28A, RGEN = 50W, VGS = 10V VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A 2. Short duration test pulse used to minimize self-heating effect. 0.7 0.6 VGS = 10, 7, 6, 5V 0.5 VGS = 4V 0.4 0.3 0.2 0.1 VGS = 3V 2.4 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 VGS = 3V 1.6 VGS = 4V 1.2 VGS = 5, 6, 7, 10V 0.8 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 5 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current DS30366 Rev. 3 - 2 2 of 3 www.diodes.com BSS123 VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.2 2. 2 RDS(ON), NORMALIZED ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 NEW PRODUCT 1.1 VGS = 10V ID = 170m 1 0.9 0.8 0.7 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Gate Threshold Variation with Temperature 50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (ºC) Fig. 4 On-Resistance Variation with Temperature 40 C, CAPACITANCE (pF) 30 20 Ciss 10 Coss Crss 0 0 10 5 20 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 25 Ordering Information Device BSS123-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K23 Date Code Key Year Code Month Code 2002 N Jan 1 Feb 2 2003 P March 3 2004 R Apr 4 K23 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2005 S May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 Oct O 2008 V Nov N Dec D DS30366 Rev. 3 - 2 3 of 3 www.diodes.com BSS123