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BSS123W-7-F

BSS123W-7-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BSS123W-7-F - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BSS123W-7-F 数据手册
BSS123W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device, Note 3 and 4 Mechanical Data • • • • • • • • • SOT-323 NEW PRODUCT Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) Drain D Gate G TOP VIEW Source S Equivalent Circuit TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID IDM Value 100 100 ±20 170 680 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Continuous Continuous Pulsed Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS123W Document number: DS30368 Rev. 8 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated BSS123W Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSSF VGS(th) RDS (ON) gFS VSD Ciss Coss Crss tr tf tD(ON) tD(OFF) Min 100 ⎯ ⎯ 0.8 ⎯ ⎯ 80 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.4 ⎯ ⎯ 370 0.84 29 10 2 ⎯ ⎯ ⎯ ⎯ Max ⎯ 1.0 10 50 2.0 6.0 10 ⎯ 1.3 60 15 6 8 16 8 13 Unit V µA nA nA V Ω mS V pF pF pF ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A N EW PRODUCT Gate-Body Leakage, Forward ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Rise Time Turn-Off Fall Time Turn-On Delay Time Turn-Off Delay Time 5. Short duration pulse test used to minimize self-heating effect. VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.28A, RGEN = 50Ω, VGS = 10V 0.7 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 0.6 0.5 0.4 0.3 0.2 2.0 1.6 1.2 0.1 0 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 5 0.8 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current BSS123W Document number: DS30368 Rev. 8 - 2 2 of 4 www.diodes.com November 2007 © Diodes Incorporated BSS123W VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.2 2.2 RDS(ON), NORMALIZED ON-RESISTANCE VDS = VGS ID = 250μA 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 0 -25 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (ºC) Fig. 4 On-Resistance Variation with Temperature 1.1 1 N EW PRODUCT 0.9 0.8 0.7 -50 50 0 75 100 125 150 -25 25 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Gate Threshold Variation with Temperature 50 250 40 C, CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 200 30 150 20 100 10 50 0 0 20 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 5 25 0 0 200 100 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Power Derating Curve, Total Package Ordering Information Part Number BSS123W-7-F Notes: (Notes 4 & 6) Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K23 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K23 Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 YM 2006 T May 5 Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D BSS123W Document number: DS30368 Rev. 8 - 2 3 of 4 www.diodes.com November 2007 © Diodes Incorporated BSS123W Package Outline Dimensions A TOP VIEW BC N EW PRODUCT G H K M J D E L SOT-323 Dim Min Max A 0.25 0.25 B 1.15 1.35 C 2.00 2.00 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS123W Document number: DS30368 Rev. 8 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated
BSS123W-7-F 价格&库存

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BSS123W-7-F
  •  国内价格
  • 10+0.27913
  • 50+0.2565
  • 200+0.23764
  • 600+0.21878
  • 1500+0.20369
  • 3000+0.19426

库存:2487