BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
E
SOT-23
A D B G TOP VIEW S D G H K J L C
Dim A B C D E G
M
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0°
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8°
Mechanical Data
Case: SOT-23, Molded Plastic Case Material - UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K38 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.)
H J K L M a
Drain
Gate
All Dimensions in mm
Source
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138 50 50 ±20 200 300 417 -55 to +150 Units V V V mA mW °C/W °C
Characteristic
Drain-Gate Voltage RGS £ 20KW Gate-Source Voltage Drain Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes:
@ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 ¾ ¾ 0.5 ¾ 100 ¾ ¾ ¾ ¾ ¾ Typ 75 ¾ ¾ 1.2 1.4 ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ 0.5 ±100 1.5 3.5 ¾ 50 25 8.0 20 20 Unit V µA nA V W mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to miminize self-heating effect.
DS30144 Rev. 6 - 2
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BSS138
Ordering Information
Device BSS138-7 Notes:
(Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2
0.6
Tj = 25° C
K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2000 L March 3
2001 M Apr 4
YM
2002 N May 5
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
VGS = 3.5V
ID, DRAIN-SOURCE CURRENT (A)
0.5
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0 0
1 2 3 4 5 6 7 8 9
10
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8 ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics
VDS = 1V -55° C
25° C 150° C
DS30144 Rev. 6 - 2
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BSS138
RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W)
2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 -5 45 95 145
VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A
Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5
20 35 50 65 80 95 110 125 140
ID = 1.0mA
Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature
RDS(ON), DRAIN-SOURCE ON RESISTANCE (W)
8 7 6 5 4 3
-55° C 25° C VGS = 2.5V 150° C
2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 6 - 2
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BSS138
9 8 7 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current
-55° C 25° C VGS = 2.75V
150° C
6
VGS = 4.5V
5
150° C
4
3
2
25° C
1
-55° C
0 0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45
0.5
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
VGS = 10V
3
150° C
2.5 2
1.5 1 0.5
25° C
-55° C
0 0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45
0.5
ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 6 - 2
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BSS138
1
ID, DIODE CURRENT (A)
0.1
150° C -55° C
0.01
25° C
0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage
100
VGS = 0V f = 1MHz
C, CAPACITANCE (pF)
CiSS
10
COSS
CrSS
1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage
DS30144 Rev. 6 - 2
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BSS138
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