BSS138DW-7

SPICE MODELS: BSS138DW BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version (Note 4) Qualified to AEC-Q101 Standards for High Reliability S2 G2 D1 D2 A G1 S1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° A B C D M Mechanical Data Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 6, on Page 2 Terminal Connections: See Diagram Marking Code (See Page 2): K38 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) @ TA = 25°C unless otherwise specified S2 D2 G H K 0.65 Nominal F H J K L M a J D G1 S1 F L G2 D1 All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1) Characteristic Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138DW 50 50 ±20 200 200 625 -55 to +150 Units V V V mA mW °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Note: 1. 2. 3. 4. @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 ¾ ¾ 0.5 ¾ 100 ¾ ¾ ¾ ¾ ¾ Typ 75 ¾ ¾ 1.2 1.4 ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ 0.5 ±100 1.5 3.5 ¾ 50 25 8.0 20 20 Unit V µA nA V W mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration test pulse used to minimize self-heating effect. RGS £ 20KW. No purposefully added lead. DS30203 Rev. 8 - 2 1 of 5 www.diodes.com BSS138DW ã Diodes Incorporated Ordering Information (Note 5) Device BSS138DW-7 Notes: 5. 6. Packaging SOT-363 Shipping 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F. Marking Information K38 YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 0.6 YM K38 2001 M Apr 4 2002 N May 5 Tj = 25° C K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0.8 ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 VDS = 1V -55° C 25° C 150° C 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30203 Rev. 8 - 2 2 of 5 www.diodes.com BSS138DW RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) 2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 -5 45 95 145 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 ID = 1.0mA Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) 8 7 6 5 4 3 -55° C 25° C VGS = 2.5V 150° C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30203 Rev. 8 - 2 3 of 5 www.diodes.com BSS138DW 9 8 7 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current -55° C 25° C VGS = 2.75V 150° C 6 VGS = 4.5V 5 150° C 4 3 2 25° C 1 -55° C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150° C 2.5 2 1.5 1 0.5 25° C -55° C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30203 Rev. 8 - 2 4 of 5 www.diodes.com BSS138DW 1 ID, DIODE CURRENT (A) 0.1 150° C -55° C 0.01 25° C 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 VGS = 0V f = 1MHz C, CAPACITANCE (pF) CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30203 Rev. 8 - 2 5 of 5 www.diodes.com BSS138DW