BSS138DW_09

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version (Note 4) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 5 and 6) Mechanical Data • • • • • • • • SOT-363 D2 G1 S1 Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID BSS138DW 50 50 ±20 200 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1) Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG BSS138DW 200 625 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 1. 2. 3. 4. 5. 6. @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 ⎯ ⎯ 0.5 ⎯ 100 ⎯ ⎯ ⎯ ⎯ ⎯ Typ 75 ⎯ ⎯ 1.2 1.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.5 ±100 1.5 3.5 ⎯ 50 25 8.0 20 20 Unit V µA nA V Ω mS pF pF pF ns ns Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RGEN = 50Ω Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. RGS ≤ 20KΩ. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS138DW Document number: DS30203 Rev. 12 - 2 1 of 5 www.diodes.com September 2009 © Diodes Incorporated BSS138DW 0.6 ID, DRAIN-SOURCE CURRENT (A) 0.5 T j = 25 °C VGS = 3.5V 0.8 0.7 VDS = 1V -55 °C VGS = 3.25V ID, DRAIN-SOURCE CURRENT (A) 0.6 0.5 25°C 0.4 VGS = 3.0V 150°C 0.3 VGS = 2.75V 0.4 0.3 0.2 0.1 0 0 0.2 VGS = 2.5V 0.1 0 7 3 4 5 6 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 1 2 0.5 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2.45 VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 -25 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 0 -55 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 45 145 95 -5 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 8 VGS = 2.5V 150°C 9 VGS = 2.75V 7 6 5 4 3 -55°C 25°C 8 7 150°C 6 5 4 25°C 3 2 -55°C 2 1 0 0 1 0 0.2 0.25 0.1 0.15 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current BSS138DW Document number: DS30203 Rev. 12 - 2 2 of 5 www.diodes.com September 2009 © Diodes Incorporated BSS138DW RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 6 VGS = 4.5V 3.5 VGS = 10V 150° C 150°C 5 3 2.5 2 25°C 4 3 25°C 1.5 1 -55°C 2 1 -55°C 0.5 0 0 0 0 0.5 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0.5 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On-Resistance vs. Drain-Current 1 100 VGS = 0V f = 1MHz ID, DIODE CURRENT (A) 0.1 150°C -55°C C, CAPACITANCE (pF) Ciss 10 Coss 0.01 25°C C rss 0.001 1 0 0.2 0.6 1 1.2 0.4 0.8 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 5 15 20 25 10 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage Ordering Information Part Number BSS138DW-7-F Notes: (Note 7) Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L Mar 3 2001 M YM K38 2002 N Apr 4 P K38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2003 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D May 5 BSS138DW Document number: DS30203 Rev. 12 - 2 3 of 5 www.diodes.com September 2009 © Diodes Incorporated BSS138DW Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 C2 Z G C1 Y X Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 BSS138DW Document number: DS30203 Rev. 12 - 2 4 of 5 www.diodes.com September 2009 © Diodes Incorporated BSS138DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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