BSS138W_2

BSS138W_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BSS138W_2 - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BSS138W_2 数据手册
BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 4) "Green" Device (Note 5 and 6) Mechanical Data • • • • • • • • • SOT-323 Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) Drain D Gate TOP VIEW Source G Equivalent Circuit TOP VIEW S Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value 50 50 ±20 200 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 1. 2. 3. 4. 5. 6. @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 ⎯ ⎯ 0.5 ⎯ 100 ⎯ ⎯ ⎯ ⎯ ⎯ Typ 75 ⎯ ⎯ 1.2 1.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.5 ±100 1.5 3.5 ⎯ 50 25 8.0 20 20 Unit V µA nA V Ω mS pF pF pF ns ns Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RGEN = 50Ω RGS ≤ 20KΩ. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS138W Document number: DS30206 Rev. 9 - 2 1 of 4 www.diodes.com October 2007 © Diodes Incorporated BSS138W 0.6 Tj = 25°C 0.8 VDS = 1V -55°C ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.5 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 150°C 25°C 0.4 0.3 0.2 0.1 0 0 5 6 9 10 2 3 4 7 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 1 2.5 0.5 1 1.5 2 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2.45 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 9 8 RDS(ON), STATIC DRAIN-SOURCE 150°C VGS = 2.75V RDS(ON), NORMALIZED DRAIN-SOURCE 2.25 2.05 ON RESISTANCE (Ω) 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A ID = 1.0mA 45 145 -5 95 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 0 -55 8 150° C 7 RDS(ON), STATIC DRAIN-SOURCE 6 ON RESISTANCE (Ω) 5 4 3 VGS = 2.5V 7 ON RESISTANCE (Ω) 6 5 4 3 2 1 0 0.1 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 0 0.05 -55°C 25°C 25° C -55°C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current BSS138W Document number: DS30206 Rev. 9 - 2 2 of 4 www.diodes.com October 2007 © Diodes Incorporated BSS138W 6 VGS = 4.5V 150°C 3.5 VGS = 10V 150°C RDS(ON), STATIC DRAIN-SOURCE 5 ON RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE 3 ON RESISTANCE (Ω) 2.5 2 25°C 4 3 25°C 1.5 1 0.5 0 2 -55°C 1 -55°C 0 0 0.1 0.2 0.3 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 100 0.3 0.4 0.5 0.2 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current 0 0.1 1 VGS = 0V f = 1MHz Ciss ID, DIODE CURRENT (A) 0.1 150°C -55 °C C, CAPACITANCE (pF) 10 Coss 25°C 0.01 Crss 0.001 0 0.2 0.4 0.8 1 1.2 0.6 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 1 0 30 5 10 15 20 25 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage Ordering Information Part Number BSS138W -7-F Notes: (Note 6 & 7) Case SOT-323 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BSS138W Document number: DS30206 Rev. 9 - 2 3 of 4 www.diodes.com October 2007 © Diodes Incorporated BSS138W Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS138W Document number: DS30206 Rev. 9 - 2 4 of 4 www.diodes.com October 2007 © Diodes Incorporated
BSS138W_2
### 物料型号 - 型号:BSS138W

### 器件简介 - BSS138W是一款N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR(N沟道增强型场效应晶体管)。

### 引脚分配 - SOT-323封装:Drain(漏极)、Source(源极)、Gate(栅极)。

### 参数特性 - 最大额定值: - 漏源电压(Vpss):50V - 漏栅电压(VDGR):50V - 栅源电压(VGss):+20V - 漏电流(ID):200mA - 热特性: - 总功率耗散(Pd):200mW - 结到环境的热阻(ROJA):625°C/W - 工作和存储温度范围(T, TSTG):-55到+150°C

### 功能详解 - 关断特性: - 漏源击穿电压(BVpss):50V - 零栅压漏电流(lpss):0.5uA - 栅体漏电流(lGss):±100nA - 开启特性: - 栅阈值电压(VGs(th)):0.5V至1.5V - 静态漏源导通电阻(RDS(ON)):1.4Ω至3.5Ω - 前向跨导(gFS):100mS - 动态特性: - 输入电容(Ciss):50pF - 输出电容(Coss):25pF - 反向传输电容(Crss):8.0pF - 开关特性: - 导通延迟时间(tD(ON)):20ns - 关闭延迟时间(tD(OFF)):20ns

### 应用信息 - 该器件适用于需要低导通电阻、低栅阈值电压、低输入电容和快速开关速度的应用。

### 封装信息 - SOT-323封装:详细信息包括尺寸和建议的焊盘布局。
BSS138W_2 价格&库存

很抱歉,暂时无法提供与“BSS138W_2”相匹配的价格&库存,您可以联系我们找货

免费人工找货