BSS138_08

BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • • SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Source G S Equivalent Circuit TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value 50 50 ±20 200 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 300 417 -55 to +150 Units mW °C/W °C Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 ⎯ ⎯ 0.5 ⎯ 100 ⎯ ⎯ ⎯ ⎯ ⎯ Typ 75 ⎯ ⎯ 1.2 1.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.5 ±100 1.5 3.5 ⎯ 50 25 8.0 20 20 Unit V µA nA V Ω mS pF pF pF ns ns Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RGEN = 50Ω 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS138 Document number: DS30144 Rev. 13 - 2 1 of 4 www.diodes.com May 2008 © Diodes Incorporated BSS138 0.6 Tj = 25°C VGS = 3.5V 0.8 ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 0.5 150°C VDS = 1V -55 °C ID, DRAIN-SOURCE CURRENT (A) 0.5 VGS = 3.25V 25°C 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.4 0.3 0.2 0.1 0 0 0.2 VGS = 2.5V 0.1 0 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 1 2 0.5 1 2.5 1.5 2 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4 4.5 2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 ID = 1.0mA RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 1.4 1.2 1 0.8 0.6 0.4 0.2 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 0 -55 -5 45 145 95 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 150°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 8 7 6 5 4 3 -55°C 25°C VGS = 2.5V 9 8 7 6 5 4 3 2 1 0 0.1 0.15 0.25 0.2 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 -55°C 25°C VGS = 2.75V 150°C 2 1 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current 0 BSS138 Document number: DS30144 Rev. 13 - 2 2 of 4 www.diodes.com May 2008 © Diodes Incorporated BSS138 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 6 VGS = 4.5V 3.5 VGS = 10V 5 150°C 3 2.5 2 1.5 1 0.5 0 150°C 4 3 25° C 2 25°C -55°C 1 -55°C 0 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current 0 0.1 1 100 VGS = 0V f = 1MHz ID, DIODE CURRENT (A) C, CAPACITANCE (pF) 0.1 150°C -55°C CiSS 10 COSS 0.01 25°C CrSS 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage Ordering Information Part Number BSS138-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BSS138 Document number: DS30144 Rev. 13 - 2 3 of 4 www.diodes.com May 2008 © Diodes Incorporated BSS138 Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 8° 0° α All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS138 Document number: DS30144 Rev. 13 - 2 4 of 4 www.diodes.com May 2008 © Diodes Incorporated