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BSS84

BSS84

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BSS84 - P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BSS84 数据手册
BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage E SOT-23 A D B G TOP VIEW Dim A C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° B C D E G H J K L S D G H K J Drain L M Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Gate M a Source All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS84 -50 -50 ±20 -130 300 417 -55 to +150 Units V V V mA mW °C/W °C Characteristic Drain-Gate Voltage RGS £ 20KW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ¾ ¾ ¾ ¾ -0.8 ¾ .05 ¾ ¾ ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ 10 18 Max ¾ -15 -60 -100 ±10 -2.0 10 ¾ 45 25 12 ¾ ¾ Unit V µA µA nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30149 Rev. 5 - 2 1 of 2 www.diodes.com BSS84 Ordering Information Device BSS84-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30149 Rev. 5 - 2 2 of 2 www.diodes.com YM BSS84
BSS84 价格&库存

很抱歉,暂时无法提供与“BSS84”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BSS84-7-F
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  • 1+0.68395
  • 10+0.6568
  • 100+0.59167
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库存:1304

BSS84V-7
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  • 5+0.79772
  • 50+0.55833

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BSS84W-7-F
  •  国内价格
  • 10+0.30663
  • 100+0.24515
  • 600+0.21432
  • 1200+0.21111
  • 3000+0.19129

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BSS84Q-7-F
    •  国内价格
    • 10+0.20821
    • 100+0.16234
    • 600+0.1394
    • 1200+0.13731
    • 3000+0.12211

    库存:1108

    BSS84DW-7-F
    •  国内价格
    • 1+0.69301
    • 10+0.66551
    • 100+0.59951
    • 500+0.56651

    库存:518

    BSS8402DW-7-F
    •  国内价格
    • 5+0.40802
    • 8+0.4019

    库存:8