BSS84DW_2

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 5 and 6) Mechanical Data • • • • • • • • • SOT-363 Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) D2 G1 S1 TOP VIEW S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value -50 -50 ±20 -130 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 300 417 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ⎯ ⎯ ⎯ ⎯ -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ ⎯ ⎯ Typ -75 ⎯ ⎯ ⎯ ⎯ -1.6 6 ⎯ ⎯ ⎯ ⎯ 10 18 Max ⎯ -15 -60 -100 ±10 -2.0 10 ⎯ 45 25 12 ⎯ ⎯ Unit V µA µA nA nA V Ω S pF pF pF ns ns Test Condition VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A VDS = -25V, VGS = 0V, f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Short duration pulse test used to minimize self-heating effect. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS84DW Document number: DS30204 Rev. 13 - 2 1 of 3 www.diodes.com November 2007 © Diodes Incorporated BSS84DW 400 -600 TA = 25°C ID, DRAIN-SOURCE CURRENT (mA) 25 350 PD , POWER DISSIPATION (mW) 300 250 200 150 100 50 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature -1.0 -500 -400 -300 -200 -100 0 0 0 0 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 9 8 7 6 5 4 3 2 T A = 125°C -0.8 ID, DRAIN-CURRENT (A) -0.6 -0.4 -0.2 1 0 TA = 25°C -0.0 0 -5 -2 -3 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage -1 VGS = -10V ID = -0.13A 0 -1 -5 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 15 25.0 RDS(ON), ON-RESISTANCE (Ω) RDS(ON), ON-RESISTANCE (Ω) 12 20.0 VGS = -3.5V VGS = -3V 9 15.0 VGS = -4.5V VGS = -5V 6 10.0 VGS = - 4V VGS = -6V 3 5.0 VGS = -8V VGS = -10V 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature -25 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 -1.0 BSS84DW Document number: DS30204 Rev. 13 - 2 2 of 3 www.diodes.com November 2007 © Diodes Incorporated BSS84DW Ordering Information Part Number BSS84DW-7-F Notes: (Note 7) Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 YM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 4 YM K84 2002 N Apr 2003 P 5 M K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D May Package Outline Dimensions A BC H K J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS84DW Document number: DS30204 Rev. 13 - 2 3 of 3 www.diodes.com November 2007 © Diodes Incorporated