BSS84V_07

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Mechanical Data • • • • • • • • SOT-563 NEW PRODUCT Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) D2 G1 S1 TOP VIEW S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value -50 -50 ±20 -130 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 150 833 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ⎯ ⎯ ⎯ ⎯ -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ ⎯ ⎯ Typ -75 ⎯ ⎯ ⎯ ⎯ -1.6 2 ⎯ ⎯ ⎯ ⎯ 10 18 Max ⎯ -15 -60 -100 ±50 -2.0 10 ⎯ 45 25 12 ⎯ ⎯ Unit V µA µA nA nA V Ω S pF pF pF ns ns Test Condition VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A VDS = -25V, VGS = 0V, f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. BSS84V Document number: DS30605 Rev. 8 - 2 1 of 3 www.diodes.com October 2007 © Diodes Incorporated BSS84V 250 200 PD, POWER DISSIPATION (mW) ID, DRAIN CURRENT (A) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 150 125 100 75 50 25 175 75 25 50 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 -1 NEW PRODUCT 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Typical Output Characteristics 3.0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 2.0 1.5 ID, DRAIN CURRENT (A) VDS = -10V -0.1 -0.01 1.0 0.5 0 -0.001 -0.001 0 -1 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Typical Transfer Characteristics -5 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current -0.01 -0.1 -1 8 IDR, REVERSE DRAIN CURRENT (A) -1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 7 6 5 4 3 2 1 0 0 -4 -10 -2 -6 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Static Drain-Source On-Resistance vs. Gate-Source Voltage -0.1 -0.01 -0.001 0 -0.5 -1.5 -1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 6 Reverse Drain Current vs. Body Diode Forward Voltage BSS84V Document number: DS30605 Rev. 8 - 2 2 of 3 www.diodes.com October 2007 © Diodes Incorporated BSS84V Ordering Information Part Number BSS84V-7 Notes: (Note 6) Case SOT-563 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information N EW PRODUCT (Note 7) K84 YM K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Notes: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year Code Month Code 2005 S Jan 1 Feb 2 2006 T Mar 3 2007 U Apr 4 May 5 2008 V Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions A BC D G K H M SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout E E Z G C Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS84V Document number: DS30605 Rev. 8 - 2 3 of 3 www.diodes.com October 2007 © Diodes Incorporated