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BSS84W_1

BSS84W_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BSS84W_1 - P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BSS84W_1 数据手册
SPICE MODEL: BSS84W BSS84W Lead-free Green P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) G S G H K M BC A D SOT-323 Dim A B C D E G H J K Drain Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° Mechanical Data · · · · · · · · · Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Code (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) 0.65 Nominal J D E L L M a Gate All Dimensions in mm Source Maximum Ratings Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG Value -50 -50 ±20 -130 200 625 -55 to +150 Units V V V mA mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30205 Rev. 9 - 2 1 of 4 www.diodes.com BSS84W ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ¾ ¾ ¾ ¾ -0.8 ¾ .05 ¾ ¾ ¾ ¾ ¾ Typ -75 ¾ ¾ ¾ ¾ -1.6 6 ¾ ¾ ¾ ¾ 10 18 Max ¾ -15 -60 -100 ±10 -2.0 10 ¾ 45 25 12 ¾ ¾ Unit V µA µA nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250mA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ordering Information Device BSS84W-7-F Notes: (Notes 4 and 6) Packaging SOT-323 Shipping 3000/Tape & Reel 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration test pulse used to minimize self-heating effect. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 K84= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30205 Rev. 9 - 2 2 of 4 www.diodes.com YM BSS84W 250 -600 TA = 25° C VGS = -5V PD, POWER DISSIPATION (mW) 200 ID, DRAIN SOURCE CURRENT (mA) -500 150 -400 -4.5V -300 100 -3.5V -200 -3.0V 50 -100 0 0 -1 -2 -3 -4 -2.5V 0 0 25 50 75 100 125 150 175 200 -5 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature -1.0 VDS, DRAIN SOURCE (V) Fig. 2, Drain Source Current vs. Drain Source Voltage 10 9 -0.8 8 TA = -55° C ID, DRAIN CURRENT (A) 7 6 TA = 25° C -0.6 5 4 3 -0.4 TA = 125° C -0.2 2 1 TA = 125° C TA = 25° C -0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 3, Drain Current vs. Gate Source Voltage 15 VGS = -10V ID = -0.13A 12 0 0 -1 -2 -3 -4 -5 VGS, GATE TO SOURCE (V) Fig. 4, On Resistance vs. Gate Source Voltage 25.0 20.0 VGS = -3.5V VGS = -3V 9 15.0 VGS = -4.5V VGS = -5V 6 10.0 VGS = -4V VGS = -6V 3 5.0 VGS = -8V VGS = -10V 0 -50 -25 0 25 50 75 100 125 150 0.0 -0.0 -0.2 TJ, JUNCTION TEMPERATURE (°C) Fig. 5, On-Resistance vs. Junction Temperature -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 6, On-Resistance vs. Drain Current DS30205 Rev. 9 - 2 3 of 4 www.diodes.com BSS84W IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30205 Rev. 9 - 2 4 of 4 www.diodes.com BSS84W
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