BSS84_10

BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Drain Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) SOT-23 D Gate Source G S Top View Equivalent Circuit Top View Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID IDM Value -50 -50 ±20 -130 -1.2 Units V V V mA A Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ⎯ ⎯ ⎯ ⎯ -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 18 Max ⎯ -15 -60 -100 ±10 -2.0 10 ⎯ 45 25 12 ⎯ ⎯ Unit V µA µA nA nA V Ω S pF pF pF ns ns Test Condition VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A VDS = -25V, VGS = 0V, f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS84 Document number: DS30149 Rev. 14 - 2 1 of 4 www.diodes.com February 2010 © Diodes Incorporated BSS84 400 -600 ID, DRAIN-SOURCE CURRENT (mA) 25 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -500 -400 -300 -200 -100 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 0 0 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage -1.0 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 9 8 7 6 5 4 3 2 TA = 125°C -0.8 ID, DRAIN-CURRENT (A) -0.6 -0.4 -0.2 1 0 TA = 25°C 0.0 0 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage -1 0 -2 -3 -4 -5 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 15 VGS = -10V ID = -0.13A 25.0 RDS(ON), ON-RESISTANCE (Ω) RDS(ON), ON-RESISTANCE (Ω) 12 20.0 9 15.0 6 10.0 3 5.0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature 0.0 0.0 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 -1.0 BSS84 Document number: DS30149 Rev. 14 - 2 2 of 4 www.diodes.com February 2010 © Diodes Incorporated BSS84 Ordering Information Part Number BSS84-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 K84 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 YW 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D Package Outline Dimensions A BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E BSS84 Document number: DS30149 Rev. 14 - 2 3 of 4 www.diodes.com February 2010 © Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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