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BU808

BU808

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BU808 - 8.0A GLASS PASSIVATED BRIDGE RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
BU808 数据手册
GBU8005 - GBU810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 200A Peak Ideal for Printed Circuit Board Applications Plastic Material: UL Flammability Classification Rating 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBU Dim A B K C L Min 21.8 3.5 7.4 1.65 2.25 1.02 4.83 17.5 18.3 3.30 0.46 0.76 Max 22.3 4.1 7.9 2.16 2.75 1.27 5.33 18.0 18.8 3.56 0.56 1.0 A M B C D E G H J Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Marked on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 Inch-pounds Maximum Marking: Date Code and Type Number Weight: 6.6 grams (approx.) J - ~~+ D E F G P N K L M N P 3.2 X 45° H All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF = 4.0A Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 2) Typical Junction Capacitance per Element (Note 3) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: @TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t CJ RqJC Tj, TSTG GBU 8005 50 35 @ TA = 25°C unless otherwise specified GBU 801 100 70 GBU 802 200 140 GBU 804 400 280 8.0 200 1.0 5.0 500 166 130 2.2 -55 to +150 GBU 806 600 420 GBU 808 800 560 GBU 810 1000 700 Unit V V A A V mA A2s pF °C/W °C 1. United mounted on 50 x 50 x 1.6mm copper plate heatsink. 2. Non-repetitive, for t > 1.0ms and < 8.3ms. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS21227 Rev. D-2 1 of 2 GBU8005-GBU810 I(AV), AVG FORWARD OUTPUT CURRENT (A) Resistive or Inductive Load 8 With heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100 6 10 Tj = 25°C 4 Without heatsink 1.0 2 Pulse width = 300µs 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.1 0.0 0.2 0.6 1.0 1.4 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 250 Cj, JUNCTION CAPACITANCE (pF) 1000 Tj = 25°C f = 1.0MHz 200 Single Half-Sine Wave (JEDEC Method) 100 100 0 1 Tj = 25°C 10 100 10 0.1 1.0 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS21227 Rev. D-2 2 of 2 GBU8005-GBU810
BU808 价格&库存

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KBU808
  •  国内价格
  • 1+1.26524
  • 10+1.17344
  • 30+1.15508
  • 100+1.1

库存:542

KBU808

库存:16

GBU808
  •  国内价格
  • 1+1.41749
  • 10+1.36499
  • 100+1.239
  • 500+1.176

库存:112

GBU808
  •  国内价格
  • 1+4.2484
  • 10+3.9216
  • 30+3.85624
  • 100+3.66016

库存:25

GBU808
  •  国内价格
  • 1+1.07157
  • 30+1.03275
  • 100+0.99392
  • 500+0.91627
  • 1000+0.87745
  • 2000+0.85415

库存:312