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BZT52C3V3

BZT52C3V3

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BZT52C3V3 - SURFACE MOUNT ZENER DIODE - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C3V3 数据手册
SPICE MODELS: BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C30 BZT52C33 BZT52C36 BZT52C39 BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE Lead-free Features · · · · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability H D G SOD-123 Dim A B J Min 3.55 2.55 1.40 — 0.45 0.25 — 0° Max 3.85 2.85 1.70 1.35 0.65 — 0.10 8° C D E G Mechanical Data · · · · · · · · Case: SOD-123 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Polarity: Cathode Band Marking: See Below Weight: 0.01 grams (approximate) C A B 0.55 Typical 0.11 Typical E H J a All Dimensions in mm Maximum Ratings Forward Voltage Power Dissipation (Note 1) @ TA = 25°C unless otherwise specified Symbol @ IF = 10mA VF Pd RqJA Tj, TSTG Value 0.9 500 250 -65 to +150 Unit V mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: 2. No purposefully added lead. 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2. Marking Information XX Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 XX = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2001 M Apr 4 YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS18004 Rev. 28 - 2 1 of 4 www.diodes.com BZT52C2V0 - BZT52C39 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Maximum Reverse Current (Note 4) IR uA 150 50 20 10 5.0 5.0 3.0 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 @ VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.1 25.2 27.3 Typical Temperature Coefficient @ IZTC mV/°C Min -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 21.4 24.4 27.4 30.4 33.4 Max 0 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 25.3 29.4 33.4 37.4 41.2 Type Number (Note 3) Zener Voltage Range (Note 4) Marking Codes Nom (V) VZ @ IZT IZT Maximum Zener Impedance (Note 3) ZZT @ IZT ZZK @ IZK W 100 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 600 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 IZK mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 Test Current IZTC Min (V) Max (V) mA 1.91 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 2.09 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C30 BZT52C33 BZT52C36 BZT52C39 Notes: 1. 2. 3. 4. WY, WY WX, WX W1, W1 W2, W2 W3, W3 W4, W4 W5, W5 W6, W6, UB W7, W7 W8, W8 W9, W9 WA, WA WB, WB WC, WC WD, WD WE, WE WF, WF WG, WG WH, WH WI, WI WJ, WJ WK, WK WL, WL WM, WM WN, WN WO, WO WP, WP WQ, WQ WR, WR WS, WS WT, WT 2.0 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2. No purposefully added lead. f = 1kHz. Short duration pulse test used to minimize self-heating effect. Ordering Information Device (Note 5) Packaging SOD-123 Shipping 3000/Tape & Reel (Type Number)-7-F* * Add “-7-F” to the appropriate type number in Table 1 above example: 6.2V Zener = BZT52C6V2-7-F. Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS18004 Rev. 28 - 2 2 of 4 www.diodes.com BZT52C2V0 - BZT52C39 0.6 50 Tj = 25°C C2V7 C3V9 C5V6 C6V8 C6V2 0.5 C3V3 C4V7 PD, POWER DISSIPATION (W) 40 IZ, ZENER CURRENT (mA) C8V2 0.4 30 0.3 20 0.2 10 0.1 Test Current IZ 5.0mA 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (° C) Fig. 1 Power Dissipation vs Ambient Temperature 0 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics C39 2 10 30 Tj = 25°C C10 C12 10 Tj = 25°C IZ, ZENER CURRENT (mA) 20 C15 IZ, ZENER CURRENT (mA) 8 6 C18 Test current IZ 2mA 4 Test Current IZ 2mA 10 Test current IZ 5mA C22 C27 C33 C36 2 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 1000 0 40 10 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 20 Tj = 25 °C f = 1MHz CT, TOTAL CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Total Capacitance vs Nominal Zener Voltage DS18004 Rev. 28 - 2 3 of 4 www.diodes.com BZT52C2V0 - BZT52C39 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS18004 Rev. 28 - 2 4 of 4 www.diodes.com BZT52C2V0 - BZT52C39
BZT52C3V3
### 物料型号 - 型号:BZT52C2V0至BZT52C10,具体型号根据封装和电压等级有所不同。

### 器件简介 - 这是一款表面贴装式Zener二极管,具有平面芯片结构,能在陶瓷PCB上进行500mW的功率耗散,适用于中等电流的通用应用,并非常适合自动化装配流程。产品符合无铅/RoHS标准,并通过了AEC-Q101高可靠性标准认证。

### 引脚分配 - 封装:SOD-123 - 极性:带有阴极带的标记。 - 端子:可焊性符合MIL-STD-202方法208,无铅镀层(亚锡表面处理,覆盖在合金42的引线上)。

### 参数特性 - 最大额定值: - 正向电压(@IF = 10mA):VF 0.9V - 功率耗散:Pd 500mW - 热阻,结到环境空气:RJA 250°C/W - 工作和存储温度范围:Tj, TSTG -65至+150°C

### 功能详解 - 这些二极管设计用于在规定的电压范围内稳定电压,防止电压尖峰对电路造成损害。它们适用于保护敏感电子设备免受静电放电、电感性负载开关和电源线路浪涌的影响。

### 应用信息 - 适用于需要电压稳定和保护的应用,如汽车电子、工业控制系统、个人电子设备等。

### 封装信息 - 尺寸:最小和最大尺寸在PDF中有详细说明,所有尺寸单位为毫米。 - 重量:大约0.01克。
BZT52C3V3 价格&库存

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BZT52C3V3-7-F
  •  国内价格
  • 10+0.13504
  • 50+0.12496
  • 200+0.11656
  • 600+0.10816
  • 1500+0.10144
  • 3000+0.09724

库存:2084

BZT52C3V3T-7
  •  国内价格
  • 10+0.18932
  • 100+0.17343
  • 600+0.15858
  • 1200+0.1562

库存:797

BZT52C3V3S-7-F
  •  国内价格
  • 10+0.19821
  • 200+0.17343
  • 600+0.1437
  • 3000+0.12388
  • 6000+0.11496

库存:12