CTA2N1P

CTA2N1P COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N A SOT-363 Dim A B Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Case material - UL Flammability Rating Classification 94V-0 Terminal Connections: See Diagram Marking: A03 Weight: 0.006 grams (approx.) CQ1 GQ2 SQ2 A03 H K BC C D F H J M 0.65 Nominal K L M J D F L All Dimensions in mm Q1 Q2 EQ1 BQ1 DQ2 Maximm Ratings, Total Device Characteristic Power Dissipation (Note 1) @ TA = 25°C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element@ TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC Value 60 40 6.0 600 Unit V V V mA Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current Continuous Continuous Symbol VDSS VDGR VGSS ID @ TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Units V V V mA DS30295 Rev. A-2 1 of 3 CTA2N1P Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @ TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) 20 40 80 100 40 ¾ 0.75 ¾ ¾ ¾ 1.0 0.1 40 1.0 250 ¾ ¾ ¾ 300 ¾ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ¾ IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ¾ ¾ ¾ ¾ ¾ 100 100 V V V nA nA IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V NEW PRODUCT Symbol Min Max Unit Test Condition DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: tD(ON) tD(OFF) ¾ ¾ 10 18 ¾ ¾ ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Ciss Coss Crss ¾ ¾ ¾ ¾ ¾ ¾ 45 25 12 pF pF pF VDS = -25V, VGS = 0V f = 1.0MHz VGS(th) RDS (ON) gFS -0.8 ¾ .05 ¾ ¾ ¾ -2.0 10 ¾ V W S VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A BVDSS IDSS IGSS -50 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 ±10 V µA µA nA nA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V Symbol Min Typ Max Unit Test Condition 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. DS30295 Rev. A-2 2 of 3 CTA2N1P Ordering Information (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel NEW PRODUCT Device CTA2N1P-7 Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 May 5 2001 M Jun 6 Jul 7 2002 N Aug 8 Sep 9 2003 O Oct O Nov N 2004 P Dec D YM 2.0 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 0.01 0.1 1 10 100 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (MMBT4401) IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (MMBT4401) DS30295 Rev. A-2 3 of 3 CTA2N1P