CTA2N1P_1

SPICE MODEL: CTA2N1P Lead-free CTA2N1P COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT · · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant (Note 2) A SOT-363 Dim A B C D F H K M Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° Mechanical Data · · · · · · · · · Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: A03, See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approx.) Q1 CQ1 GQ2 SQ2 A03 BC 0.65 Nominal H J K L M a J D F L All Dimensions in mm Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Maximum Ratings, Q1, MMBT4401 NPN Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC @ TA = 25°C unless otherwise specified Value 60 40 6.0 600 Unit V V V mA Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current Notes: @ TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Units V V V mA Symbol VDSS VDGR Continuous Continuous VGSS ID 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30295 Rev. 6 - 2 1 of 7 www.diodes.com CTA2N1P ã Diodes Incorporated Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @ TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) 20 40 80 100 40 ¾ 0.75 ¾ ¾ ¾ 1.0 0.1 40 1.0 250 ¾ ¾ ¾ 300 ¾ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ¾ IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ¾ ¾ ¾ ¾ ¾ 100 100 V V V nA nA IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V NEW PRODUCT Symbol Min Max Unit Test Condition DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) ¾ ¾ 10 18 ¾ ¾ ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Ciss Coss Crss ¾ ¾ ¾ ¾ ¾ ¾ 45 25 12 pF pF pF VDS = -25V, VGS = 0V f = 1.0MHz VGS(th) RDS (ON) gFS -0.8 ¾ .05 ¾ ¾ ¾ -2.0 10 ¾ V W S VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A BVDSS IDSS IGSS -50 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 ±10 V µA µA nA nA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V Symbol Min Typ Max Unit Test Condition Notes: 3. Short duration pulse test used to minimize self-heating effect. DS30295 Rev. 6 - 2 2 of 7 www.diodes.com CTA2N1P Ordering Information (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel NEW PRODUCT Device CTA2N1P-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 2001 M Feb 2 March 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S Jul 7 Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30295 Rev. 6 - 2 3 of 7 www.diodes.com YM CTA2N1P MMBT4401 Section 200 1000 NEW PRODUCT PD, POWER DISSIPATION (mW) 150 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 100 50 10 0 0 25 50 75 100 125 150 175 200 1 0.1 1 10 VCE = 1.0V 100 1000 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature (Total Device) IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region DS30295 Rev. 6 - 2 4 of 7 www.diodes.com CTA2N1P MMBT4401 Section 1.0 NEW PRODUCT VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50°C TA = 25°C TA = 150°C 0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 DS30295 Rev. 6 - 2 5 of 7 www.diodes.com CTA2N1P BSS84 Section 600 -1.0 TA = 25° C VGS = 5V ID, DRAIN-TO-SOURCE CURRENT (mA) NEW PRODUCT 500 -0.8 ID, DRAIN CURRENT (A) 4.5V 400 TA = -55° C -0.6 TA = 25° C TA = 125° C 300 3.5V -0.4 200 3.0V 100 2.5V -0.2 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Source Current vs. Drain Source Voltage -0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9, Drain Current vs. Gate Source Voltage 15 VGS = -10V ID = -0.13A 12 10 9 8 7 6 5 4 3 2 TA = 125° C 9 6 3 1 0 0 1 2 TA = 25° C 3 4 5 0 -50 -25 0 25 50 75 100 125 150 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10, On Resistance vs. Gate Source Voltage TJ, JUNCTION TEMPERATURE (°C) Fig. 11, On-Resistance vs. Junction Temperature DS30295 Rev. 6 - 2 6 of 7 www.diodes.com CTA2N1P BSS84 Section 25.0 NEW PRODUCT 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V VGS = -5V VGS = -4V 15.0 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30295 Rev. 6 - 2 7 of 7 www.diodes.com CTA2N1P