CTA2N1P_2

CTA2N1P COMPLEX TRANSISTOR ARRAY Features • • • • • Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A N EW PRODUCT A03 BC Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A03, See Page 6 Ordering Information: See Page 6 Weight: 0.006 grams (approximate) K H M J D F L CQ1 GQ2 SQ2 SOT-363 Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.80 2.20 0.10 ⎯ 0.90 1.00 0.25 0.40 0.10 0.25 8° 0° α All Dimensions in mm Dim A B C D F H J K L M Q1 Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @TA = 25°C unless otherwise specified Symbol (Note 1) (Note 1) Pd RθJA Tj, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Maximum Ratings, Q1, MMBT4401 NPN Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC @TA = 25°C unless otherwise specified Value 60 40 6.0 600 Unit V V V mA Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current Notes: @TA = 25°C unless otherwise specified Value -50 -50 ±20 -130 Unit V V V mA Symbol VDSS VDGR Continuous Continuous VGSS ID 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30295 Rev. 7 - 2 1 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ⎯ ⎯ 20 40 80 100 40 ⎯ 0.75 ⎯ ⎯ ⎯ 1.0 0.1 40 1.0 250 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 100 100 ⎯ ⎯ ⎯ 300 ⎯ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ⎯ @TA = 25°C unless otherwise specified Unit V V V nA nA Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 -4 N EW PRODUCT Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V Ccb Ceb hie hre hfe hoe fT pF pF kΩ x 10 ⎯ μS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA td tr ts tf 15 20 225 30 ns ns ns ns Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 5. Short duration pulse test used to minimize self-heating effect. @TA = 25°C unless otherwise specified Test Condition VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 ⎯ ⎯ ⎯ ⎯ -0.8 ⎯ .05 ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 18 Max ⎯ -15 -60 -100 ±10 -2.0 10 ⎯ 45 25 12 ⎯ ⎯ Unit V µA µA nA nA V Ω S pF pF pF ns ns VDS = -25V, VGS = 0V f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V DS30295 Rev. 7 - 2 2 of 6 www.diodes.com CTA2N1P © Diodes Incorporated MMBT4401 Section 200 PD, POWER DISSIPATION (mW) 1,000 150 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 100 N EW PRODUCT 10 50 VCE = 1.0V 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 200 1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 30 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 1 10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.01 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance 50 DS30295 Rev. 7 - 2 3 of 6 www.diodes.com CTA2N1P © Diodes Incorporated MMBT4401 Section 0.5 VBE(ON), BASE EMITTER VOLTAGE (V) IC = 10 IB 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5V TA = -50°C VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.4 TA = 25°C 0.3 TA = 150°C TA = 25°C N EW PRODUCT 0.2 TA = 150°C 0.1 TA = -50°C 0 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 DS30295 Rev. 7 - 2 4 of 6 www.diodes.com CTA2N1P © Diodes Incorporated BSS84 Section 600 ID, DRAIN-TO-SOURCE CURRENT (mA) -1.0 500 ID, DRAIN CURRENT (A) -0.8 400 -0.6 300 N EW PRODUCT -0.4 200 100 -0.2 0 0 4 1 2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8 Drain-Source Current vs. Drain-Source Voltage 5 -0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9 Drain Current vs. Gate Source Voltage 10 9 RDS(ON), ON-RESISTANCE (Ω) 15 VGS = -10V ID = -0.13A 8 7 6 5 4 3 2 TA = 125° C 12 9 6 3 1 0 0 1 2 TA = 25° C 3 4 5 0 -50 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10 On-Resistance vs. Gate-Source Voltage 75 100 125 150 -25 25 0 50 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 On-Resistance vs. Junction Temperature 25.0 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V VGS = -5V VGS = -4V 15.0 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current -0.2 1.0 DS30295 Rev. 7 - 2 5 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel Device CTA2N1P-7-F Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. N EW PRODUCT Marking Information A03 A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P Mar 3 2004 R Apr 4 YM 2005 S May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30295 Rev. 7 - 2 6 of 6 www.diodes.com CTA2N1P © Diodes Incorporated