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ES1C

ES1C

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    ES1C - 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
ES1C 数据手册
ES1A - ES1G 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER Features · · · · · · · · · · · · · Glass Passivated Die Construction Super-Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly A B Dim A SMA Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 Mechanical Data Case: Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: Type Number & Date Code: See Below Ordering Information: See Below Weight: 0.064 grams (approx.) C B C D E G H D J H G E J All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 110°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Total Capacitance (Note 2) Typical Thermal Resistance, Junction to Terminal (Note 3) Operating and Storage Temperature Range @ IF = 0.6A @ IF = 1.0A @ TA = 25°C @ TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr CT RqJT Tj, TSTG @ TA = 25°C unless otherwise specified ES1A 50 35 ES1B 100 70 ES1C 150 105 1.0 30 0.90 0.98 5.0 200 20 10 40 -65 to +150 ES1D 200 140 ES1G 400 280 Unit V V A A ¾ 1.25 V mA ns pF °C/W °C Ordering Information Device* ES1x-13 Notes: (Note 4) Packaging SMA Shipping 5000/Tape & Reel 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *x = Device type, e.g. ES1A-13. Marking Information YWW XXXX DS14001 Rev. 8 - 2 XXXX = Product type marking code, ex. ES1A = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 1 of 2 ES1A - ES1G IF, INSTANTANEOUS FORWARD CURRENT (A) 1.5 10 IO, AVERAGE RECTIFIED CURRENT (A) ES1A - ES1D ES1G 1.0 1.0 0.5 0.1 Tj = 25°C IF Pulse Width: 300 µs 0 25 50 75 100 125 150 175 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 30 Single Half-Sine-Wave (JEDEC Method) IR, INSTANTANEOUS REVERSE CURRENT (µA) 100 Tj = 100°C 20 10 10 1.0 Tj = 25°C 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Surge Current Derating Curve 100 0.1 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) Device Under Test 10Ω NI (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DS14001 Rev. 8 - 2 2 of 2 ES1A - ES1G

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