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ES3DB

ES3DB

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    ES3DB - 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
ES3DB 数据手册
ES3A/B - ES3D/B 3.0A SURFACE MOUNT SUPER-FAST RECTIFIER Features · · · · · · Glass Passivated Die Construction Super-Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak Ideally Suited for Automated Assembly Plastic Material: UL Flammability Classification Rating 94V-0 B Dim A SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 SMC Min 5.59 6.60 2.75 0.15 7.75 0.10 0.76 2.00 Max 6.22 7.11 3.18 0.31 8.13 0.20 1.52 2.62 A C B C D Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMB Weight: 0.093 grams (approx.) SMC Weight: 0.21 grams (approx.) Mounting Position: Any Marking: Type Number J D E G H H G E J All Dimensions in mm AB, BB, CB, DB Suffix Designates SMB Package A, B, C, D, Suffix Designates SMC Package Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Reverse Recovery Time (Note 3) Typical Junction Capacitance (Note 2) Typical Thermal Resistance, Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: @ IF = 3.0A @ TA = 25°C @ TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJT Tj, TSTG @ TA = 25°C unless otherwise specified ES3A/B 50 35 ES3B/B 100 70 3.0 100 0.9 10 500 25 45 15 ES3C/B 150 105 ES3D/B 200 140 Unit V V A A V mA ns pF K/W °C -65 to +150 1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5. DS14003 Rev. E1-2 1 of 2 ES3A/B - ES3D/B 2.0 IF, INSTANTANEOUS FORWARD CURRENT (A) 3 .0 10 IO, AVERAGE RECTIFIED CURRENT (A) 1.0 1.0 0.1 0 25 50 75 100 125 150 175 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve Tj = 25°C Pulse Width: 300µs 0.01 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) Single Half-Sine-Wave (JEDEC Method) 100 IR, INSTANTANEOUS REVERSE CURRENT (A) 120 1000 Tj = 125°C 80 60 40 100 10 Tj = 25°C 20 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve 100 1.0 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) Device Under Test 10Ω NI (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DS14003 Rev. E1-2 2 of 2 ES3A/B - ES3D/B
ES3DB 价格&库存

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ES3DB
  •  国内价格
  • 1+0.1575
  • 100+0.147
  • 300+0.1365
  • 500+0.126
  • 2000+0.12075
  • 5000+0.1176

库存:18

ES3DB
  •  国内价格
  • 10+0.1936
  • 50+0.17852
  • 200+0.16594
  • 600+0.15337
  • 1500+0.14332
  • 3000+0.13703

库存:2790

ES3DBF
  •  国内价格
  • 1+0.17099
  • 100+0.15959
  • 300+0.14819
  • 500+0.13679
  • 2000+0.13109
  • 5000+0.12767

库存:5000

ES3DB-13-F
  •  国内价格
  • 1+1.58922
  • 10+1.53036
  • 100+1.3891
  • 500+1.31846

库存:562