FCX1053ATA

FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE(sat) = 78m IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications. Features • • • • • Extremely low equivalent on-resistance; RCE(sat) = 7.8m 3 Amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent hFE characteristics up to 10 amps at 4.5A C B E Applications • • • • • • • Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC-DC modules Backlight inverters Power switches MOSFET gate drivers E C C B Pinout - top view Ordering information Device FCX1053ATA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Device marking 053 Issue 2 - July 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com FCX1053A Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak pulse current Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Tj;Tstg PD Symbol VCBO VCEO VEBO IC ICM PD Value 150 75 5 3 10 1.6 13 2.0 16 -55 to +150 Unit V V V A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient (a) Symbol R JA R JA Value 72 62 Unit °C/W °C/W Junction to ambient(b) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - July 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com FCX1053A Thermal characteristics Issue 2 - July 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com FCX1053A Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter cut-off current Collector-emitter saturation voltage Symbol V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES VCE(sat) Min. 150 150 75 150 5 Typ. 250 250 100 250 8.8 0.9 0.3 1.5 21 55 150 160 350 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 270 300 300 40 900 825 440 450 450 60 20 Switching times ton toff Transition frequency Output capacitance fT COBO 162 900 140 21 30 2%. Max. Unit V V V V V Conditions IC = 100 A IC = 100 A IC = 10mA IC = 100 A, VEB = 1V IE = 100 A VCB = 120V VEB = 4V VCES = 120V IC = 0.2A, IB = 20mA (*) IC = 0.5A, IB = 20mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 100mA(*) IC = 4.5A, IB = 200mA(*) IC = 3A, IB = 100mA(*) IC = 3A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) 10 10 10 30 75 200 210 440 1000 950 nA nA nA mV mV mV mV mV mV mV 1200 IC = 0.5A, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 4.5A, VCE = 2V(*) IC = 10A, VCE = 2V(*) ns ns MHz pF IC = 2A, IB1 = IB2 = VCC = 50V IC = 2A, IB1 = IB2 = VCC = 50V 20mA, 20mA, IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, f = 1MHz NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty Issue 2 - July 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com FCX1053A Typical characteristics Issue 2 - July 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com FCX1053A Package outline - SOT89 D D1 C A H E E1 L B B1 e e1 DIM A B B1 C D E Millimeters Min 1.40 0.44 0.36 0.35 4.40 2.29 Max 1.60 0.56 0.48 0.44 4.60 2.60 Inches Min 0.550 0.017 0.014 0.014 0.173 0.090 Max 0.630 0.022 0.019 0.019 0.181 0.102 DIM E1 e e1 H L Millimeters Min 2.13 Max 2.29 Inches Min 0.084 Max 0.090 1.50 BSC 3.00 BSC 3.94 0.89 4.25 1.20 - 0.059 BSC 0.118 BSC 0.155 0.155 0.167 0.167 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - July 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com