FCX1147A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1147A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 53mΩ at 3A FCX1047A 147 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -15 -12 -5 -20 -3 -500 1† 2‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1147A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV V(BR)EBO ICBO IEBO ICES VCE(sat) MIN. -15 -12 -12 -12 -5 -0.3 -0.3 -0.3 -25 -70 -90 -115 -160 -250 -820 -770 270 250 200 200 150 90 450 400 340 300 245 145 50 115 80 150 220 -10 -10 -10 -50 -110 -130 -170 -250 -400 -1000 -950 TYP. MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-12V VEB=-4V VCES=-10V IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-3A, IB=-30mA* IC=-5A, IB=-50mA* IC=-3A, IB=-30mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2.0A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* IC=-20.0A, VCE=-2V* MHz pF ns ns IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB=−40mA, VCC=-10V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 850 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1147A TYPICAL CHARACTERISTICS 2.0 1.6 +25°C 2.0 IC/IB=100 1.6 -55°C +25°C +100°C +150°C 1.2 0.8 0.4 0 IC/IB=50 IC/IB=100 IC/IB=200 1.2 0.8 0.4 0 1m 1m 10m IC - 100m 1 10 100 10m 100m 1 10 100 Collector Current (A) VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 1.2 VCE=2V IC/IB=100 600 +100 C +25 C -55 C 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +150°C 400 200 0 1m 10m IC 100m 1 10 100 0 1m 10m 100m 1 10 100 Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.2 VCE=2V 100 1.0 0.8 0.6 0.4 0.2 0 1m 10m IC 100m 1 10 100 0.1 100m -55°C +25°C +100°C +175°C 10 1 DC 1s 100ms 10ms 1ms 100µs 1 10 100 Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area