FCX1151A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES FCX1151A C * * * * * 2W POWER DISSIPATION 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 66mΩ at 3A FCX1051A 151 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -45 -40 -5 -5 -3 -500 1† 2‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV V(BR)EBO ICBO IEBO ICES VCE(sat) -45 -40 -40 -40 -5 -0.3 -0.3 -0.3 -60 -120 -140 -200 -985 -850 270 250 180 100 450 400 300 190 45 145 40 170 460 -100 -100 -100 -90 -180 -220 -300 -1050 -950 TYP. MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-36V VEB=-4V VCE=-32V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-3A, IB=-250mA* IC=-3A, IB=-250mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* MHz pF ns ns IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB=-20mA, VCC=-30V IC=-2A, IB=±20mA, VCC=-30V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1151A TYPICAL CHARACTERISTICS 0.4 +25°C 0.4 IC/IB=100 0.3 IC/IB=50 IC/IB=100 IC/IB=200 0.3 -55°C +25°C +100°C +150°C 0.2 0.2 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) VCE(sat) v IC IC - Collector Current (A) VCE(sat) v IC 800 VCE=2V 1.0 IC/IB=100 0.8 600 +100°C 0.6 400 +25°C 0.4 200 -55°C 0.2 0 -55°C +25°C +100°C +150°C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 0.9 10 0.6 1 DC 1s 100ms 10ms 1ms 1us 0.3 -55°C +25°C +100°C +150°C 0.1 0 1m 10m 100m 1 10 0.01 100m 0.1 10 100 IC - Collector Current (A) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area