FCX458

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – FCX558 N58 FCX458 C E C B SYMBOL VCBO V CEO V EBO IC I CM P tot T j :T stg VALUE 400 400 5 225 500 1 -65 to +150 UNIT V V V mA mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO Collector Cut-Off Currents ICBO I CES Emitter Cut-Off Current Emitter Saturation Voltages I EBO V CE(sat) V BE(sat) Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times V BE(on) h FE 100 100 15 50 5 135 Typical 2260 Typical MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C=100 µ A I C=10mA* I E=100 µ A V CB=320V V CE =320V V EB=4V I C=20mA, I B=2mA* I C=50mA, I B=6mA* I C=50mA, I B=5mA* I C =50mA, V CE=10V* I C=1mA, V CE=10V I C=50mA, V CE=10V* I C=100mA, V CE=10V** MHz pF ns ns I C=10mA, V CE=20V f=20MHz V CB=20V, f=1MHz I C=50mA, V C=100V I B1=5mA, I B2=-10mA 300 fT C obo t on t off *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT458 datasheet 3 - 85