FCX493TA

FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions. FEATURES • 1 amp continuous current • Low saturation voltages SOT89 APPLICATIONS • Load management functions • Solenoid, relay and actuator drivers • DC-DC modules DEVICE MARKING N93 PINOUT ORDERING INFORMATION DEVICE FCX493TA FCX493TC REEL SIZE 7” 13" TAPE WIDTH 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units TOP VIEW ISSUE 5 - OCTOBER 2005 1 SEMICONDUCTORS FCX493 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation at T amb =25°C Operating and storage temperature range SYMBOL V CBO V CEO V EBO IC I CM IB P tot T j :T stg VALUE 120 100 5 1 2 200 1 -65 to +150 UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Breakdown voltages SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO Collector cut-off currents I CBO I CES Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn on voltage Static forward current transfer ratio I EBO V CE(sat) V BE(sat) V BE(on) h FE 100 100 60 20 150 10 300 s; duty cycle 2%. MIN. 120 100 5 100 100 100 0.3 0.6 1.15 1.0 MAX. UNIT V V V nA nA nA V V V V CONDITIONS I C =100 µ A I C =10mA* I E =100 µ A V CB =100V V CES =100V V EB =4V I C =500mA, I B =50mA I C =1A, I B =100mA I C =1A, I B =100mA I =1A, V CE =10V C I C =1mA, V CE =10V* I C =250mA, V CE =10V* I C =500mA, V CE =10V* I C =1A, V CE =10V* 300 Transition frequency Output capacitance fT C obo MHz pF I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width ISSUE 5 - OCTOBER 2005 SEMICONDUCTORS 2 FCX493 TYPICAL CHARACTERISTICS ISSUE 5 - OCTOBER 2005 3 SEMICONDUCTORS FCX493 CHARACTERISTICS ISSUE 5 - OCTOBER 2005 SEMICONDUCTORS 4 FCX493 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches © Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - OCTOBER 2005 5 SEMICONDUCTORS