FCX555

FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management functions. Features • 180 volts forward blocking Applications • • • • Voice over internet protocol (VOIC) MOSFET gate drivers Power switches Motor control Ordering information Device FCX555TA Reel size 7” Tape width 12mm embossed Quantity per reel 1,000 Pin out - top view Device marking 555 Issue 1 - November 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com FCX555 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Symbol VCBO VCEV VEBO IC ICM PD PD Tj:Tstg Limit -180 -180 -7 -0.7 -2 1.5 12 2.1 16.8 -55 to +150 Unit V V V A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol RθJA Value 83 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - November 2005 © Zetex Semiconductors plc 2005 2 www.zetex.com FCX555 Electrical characteristics Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Symbol BVCBO BVCEV BVCER BVEBO BVCEO ICBO Min. -180 -180 Typ. Max. Unit V V Conditions IC = -100µA IC = -1µA, -0.3V < VBE < 1V IC = -1µA, RB 1k IE= -100µA IC =-10mA(*) VCB = -144V VCB = -144V, TAMB = 100°C VEB = -6V IC = -0.1A, IB = -10mA(*) IC = -0.25A, IB = -25mA(*) IC =-250mA, IB =-25mA(*) IC =-250mA, VCE =-5V(*) IC = -10mA, VCE = -5V(*) 300 100 MHz IC = -100mA, VCE = -5V(*) Ic = -50mA, VCE = -10V, f = 100MHZ VCB 1= -10V, f = 1MHZ(*) -180 -7 -150