FCX558

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – FCX458 P58 FCX558 C E C B SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MIN. -400 -400 -5 -100 -100 -0.2 -0.5 -0.9 -0.9 100 100 15 50 5 95 Typical 1600 Typical MAX. VALUE -400 -400 -5 -200 -500 1 -65 to +150 UNIT V V V mA mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ;ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE UNIT V V V nA nA V V V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-320V; VCES = 320V VEB=-4V IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* IC=-50mA, IB=-5mA* IC=-50mA, VCE=-10V* IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* MHz pF ns ns IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-50mA, VC=-100V IB1=-5mA, IB2=-10mA 300 fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FZT558 datasheet. 3 - 90