FCX589

SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – P89 7 FCX589 C E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j :T stg VALUE -50 -30 -5 -2 -1 -200 1 -65 to +150 B UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages SYMBOL MIN. V (BR)CBO V (BR)CEO V (BR)EBO Collector Cut-Off Current Collector -Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio I CBO I CES I EBO V CE(sat) V BE(sat) V BE(on) h FE 100 100 80 40 100 15 -50 -30 -5 -100 -100 -100 -0.35 -0.65 -1.2 -1.1 MAX. UNIT V V V nA nA nA V V V CONDITIONS. I C=-100 µ A I C=-10mA* I E=-100 µ A V CB=-30V V CES =-30V V EB=-4V I C=-1A, I B=-100mA* I C=-2A, I B=-200mA* I C=-1A, I B=-100mA* I C =-1A, V CE=-2V* I C=-1mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* I C=-2A, V CE=-2V* MHz pF I C=-100mA, V CE=-5V f=100MHz V CB=-10V, f=1MHz 300 Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT549 datasheet 3 - 91