FCX591

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – 7 FCX491 C FCX591 N1 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg VALUE 80 60 5 1 2 1 -65 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 100 100 80 30 150 10 MIN. 80 60 5 100 100 100 0.25 0.50 1.1 1.0 MAX. UNIT V V V nA nA nA V V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=60V, VCE=60V VEB=4V IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=1A, IB=100mA* IC=1A, VCE=5V* IC=1mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 300 Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT491 datasheet 3 - 86