FCX605

FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE(sat)= 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low on state losses at 120V operation. This makes it deal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching. FEATURES • • • • • Low Saturation Voltage Hfe min 2K @ 1A IC= 1A Continuous SOT89 package with Plot 1W Specification is also available in Eline and SOT223 package outlines E B C SOT 89 APPLICATIONS • Various driving functions - Lamps - Motors - Relays and solenoids High output current switches • E C TAPE WIDTH (mm) 12mm embossed QUANTITY PER REEL 1000 units Top View ORDERING INFORMATION DEVICE FCX605TA DEVICE MARKING 605 REEL SIZE (inches) 7 C B ISSUE 2 - SEPTEMBER 2005 1 FCX605 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC PD LIMIT NPN 140 120 10 4 1 1 8 2.8 22 -55 to +150 UNIT V V V A A W mW/°C W mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 125 45 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 2 - SEPTEMBER 2005 2 FCX605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO MIN. 140 120 10 100 10 TYP. MAX. UNIT V V V nA µA CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =10V V CB = 120V Tamb = 100°C Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio I EBO I CES V CE(sat) 0.1 10 1 1.5 V BE(sat) V BE(on) h FE 2K 5K 2K 0.5 150 90 15 0.5 1.6 1.8 1.7 µA µA V V V V V EB = 8V V CES =120V I C =250mA, I B = 0.25mA* I C =1A, I B =1mA* I C =1A, I B = 1mA* I C = 1A, V CE = 5V* I C = 50mA, V CE = 5V* I C =500mA, V CE = 5V* I C =1A, V CE = 5V* I C =2A, V CE = 5V* MHz pF pF µs µs I C =100mA, V CE =10V f=20MHz V CB =500mV, f=1MHz V CB =10V, f=1MHz I C =500mA, V CE =10V I B1 =I B2 =0.5mA I C =500mA, V CE =10V I B1 =I B2 =0.5mA 100K Transition Frequency Input Capacitance Output Capacitance Turn-On Time Turn-Off Time fT C ibo C obo t (on) t (off) *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% Nb. Spice parameter data is available upon request for this device. ISSUE 2 - SEPTEMBER 2005 3 FCX605 NPN TYPICAL CHARACTERISTICS 1.8 1.6 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=100 hFE - Gain normalised to 1 Amp -55 C +25 C +100 C +175 C 2.5 -55 C +25 C +100 C 2.0 1.5 VCE=5V 1.0 0.5 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 -55 C +25 C +100 C +175 C 2.2 2.0 1.8 -55 C +25 C +100 C VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 IC/IB=100 VBE - (Volts) 1.6 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 VCE=5V IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test at Tamb=25 C 10 VBE(on) v IC IC - Collector Current (Amps) 1.0 D.C. 1s 100ms 10ms 1.0ms 100µs 0.1 ZT X6 04 ZTX605 0.01 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area ISSUE 2 - SEPTEMBER 2005 4 FCX605 PACKAGE DIMENSIONS PAD LAYOUT DETAILS 2.4 4.0 1.5 1.2 1.0 3.2 1.2 SOT89 pattern. PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c 1.40 0.38 1.50 0.28 Max 1.60 0.48 0.53 1.80 0.44 Min 0.550 0.015 0.060 0.011 Max 0.630 0.019 0.021 0.071 0.017 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches © Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2005 5