FCX705TA

FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE(sat)= 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at 120V operation. This makes it deal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching. SOT89 FEATURES • Low Saturation Voltage • HFE min 3K @ -1A • IC= -2A Continuous • SOT89 package with Ptot - 1W • Specification is also available in Eline and SOT223 package outlines APPLICATIONS • Various driving functions - Lamps - Motors - Relays and solenoids • High output current switches ORDERING INFORMATION DEVICE FCX705TA REEL SIZE 7’‘ TAPE WIDTH 12mm QUANTITY PER REEL 1000 units DEVICE MARKING 705 Top View ISSUE 4 - DECEMBER 2002 1 SEMICONDUCTORS FCX705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC PD LIMIT PNP -140 -120 -10 -4 -1 1 8 2.8 22 -55 to +150 UNIT V V V A A W mW/°C W mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 125 45 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 4 - DECEMBER 2002 SEMICONDUCTORS 2 FCX705 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO MIN. -140 -120 -10 -100 -10 TYP. MAX. UNIT V V V nA µA CONDITIONS. I C = -100 A I C = -10mA* I E = -100 A V CB = -10V V CB = -120V Tamb = 100°C Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio I EBO I CES V CE(sat) -0.1 -10 -1.3 -2.5 V BE(sat) V BE(on) h FE 3K 3K 3K 2K 160 90 15 0.6 0.8 -1.8 -1.7 µA µA V V V V V EB = -8V V CES = -120V I C = -1A, I B = -1mA* I C = -2A, I B = -2mA* I C = -1A, I B = -1mA* I C = -1A, V CE = -5V* IC= IC= IC= IC= MHz pF pF µs µs -10mA, V CE = -5V* -100mA, V CE = -5V* -1A, V CE = -5V* -2A, V CE = -5V* 30K Transition Frequency Input Capacitance Output Capacitance Turn-On Time Turn-Off Time fT C ibo C obo t (on) t (off) I C = -100mA, V CE = -10V f= 20MHz V CB = -500mV, f= 1MHz V CB = -10V, f= 1MHz I C = -500mA, V CE = -10V I B1 =I B2 = -0.5mA I C = -500mA, V CE = -10V I B1 =I B2 = -0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Nb. Spice parameter data is available upon request for this device. ISSUE 4 - DECEMBER 2002 3 SEMICONDUCTORS FCX705 PNP CHARACTERISTICS ISSUE 4 - DECEMBER 2002 SEMICONDUCTORS 4 FCX705 PACKAGE DIMENSIONS A H C PAD LAYOUT DETAILS K DB G N F Millimetres DIM Min A B C D F G H K L N 4.40 3.75 1.40 0.28 0.38 1.50 2.60 2.90 1.4 Max 4.60 4.25 1.60 2.60 0.45 0.55 1.80 2.85 3.10 1.60 Min Inches Max 0.181 0.167 0.630 0.102 0.018 0.022 0.072 0.112 0.112 0.063 0.173 .150 0.550 0.011 0.015 0.060 0.102 0.114 0.055 © Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 4 - DECEMBER 2002 5 SEMICONDUCTORS