FCX717

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MAY 1999 FEATURES FCX717 * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A Partmarking Detail - 717 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -12 -12 -5 -10 -3 -500 1† 2‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle  2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -12 -110 -230 -0.92 -0.85 300 300 160 60 45 80 475 450 240 100 70 110 21 70 130 30 MHz pF ns ns -20 -150 -320 -1.05 -1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VCES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-3A, IB=-50mA* IC=-3A, IB=-50mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.1A, VCE=-2V* IC=-3A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICES VCE(sat) VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%