FCX789A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 -NOVEMBER 1998 FEATURES FCX789A C * * * * 2W POWER DISSIPATION 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. FCX688B 789 Complimentary Type Partmarking Detail - E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -25 -25 -5 -8 -3 1† 2‡ -55 to +150 UNIT V V V A A W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions when soldering surface mount components. FCX789A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. -25 -25 -5 -0.1 -0.1 -190 -400 -320 -0.9 -0.8 300 230 180 75 100 225 25 35 400 800 TYP. MAX. UNIT V V V µA µA mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-15V VEB=-4V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V VBE(sat) VBE(on) hFE Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FCX789A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 -55°C +25°C +100°C +175°C IC/IB=100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100°C +25°C -55°C VCE=2V 1.6 750 1.4 1.2 500 1.0 0.8 250 0.6 0.4 0.2 -55°C +25°C +100°C +175°C IC/IB=100 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -55°C +25°C +100°C VCE=2V 1 DC 1s 100ms 10ms 1ms 100us 0.1 0.01 0.1 1 10 0.01 100m 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area Safe