FMMT38B

FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C TYPICAL CHARACTERISTICS IC/IB=100 1.0 1.6 +100°C VCE=5V SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J FMMT38A FMMT38B FMMT38C C B E VCE(sat) - (Volts) 0.8 -55°C +25°C hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C 0.6 +100°C 0.4 +175°C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range IC - Collector Current (Amps) SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 80 60 10 800 300 330 -55 to +150 UNIT V V V mA mA mW °C 0.2 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC IC/IB=100 2.0 2.0 VCE=5V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER -55°C VBE(sat) - (Volts) 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 VBE - (Volts) -55°C SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 80 60 10 MIN. MAX. V V V 100 100 1.25 1.8 UNIT CONDITIONS. I C=10 A , I E=0 I C=10mA, I B=0 I E=10 A , I C=0 V CB=60V, I E=0 V EB=8V, I C=0 I C=800mA, I B=8mA* I C=800mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* 2% +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) nA nA V V VBE(sat) v IC 1 VBE(on) v IC Thermal Resistance (°C/W) 150 IC - Collector Current (A) D=1 (D.C.) 100m DC 1s 100ms 10ms 1ms 100us 100 D=0.5 Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio 1 10 100 10m FMMT38A h FE FMMT38B FMMT38C 50 D=0.2 D=0.1 D=0.05 Single Pulse 500 1000 2000 4000 5000 10000 1m 0.1 1 10 100 100m 0 0.0001 0.001 0.01 Pulse Width (seconds) VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 101 3 - 100 
Maximum transient thermal impedance *Measured under pulsed conditions. Pulse width=300 s. Duty cycle Spice parameter data is available upon request for this device
1.5 Collector-Base Breakdown Voltage
FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C TYPICAL CHARACTERISTICS IC/IB=100 1.0 1.6 +100°C VCE=5V SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J FMMT38A FMMT38B FMMT38C C B E VCE(sat) - (Volts) 0.8 -55°C +25°C hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C 0.6 +100°C 0.4 +175°C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range IC - Collector Current (Amps) SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 80 60 10 800 300 330 -55 to +150 UNIT V V V mA mA mW °C 0.2 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC IC/IB=100 2.0 2.0 VCE=5V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER -55°C VBE(sat) - (Volts) 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 VBE - (Volts) -55°C SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 80 60 10 MIN. MAX. V V V 100 100 1.25 1.8 UNIT CONDITIONS. I C=10 A , I E=0 I C=10mA, I B=0 I E=10 A , I C=0 V CB=60V, I E=0 V EB=8V, I C=0 I C=800mA, I B=8mA* I C=800mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* 2% +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) nA nA V V VBE(sat) v IC 1 VBE(on) v IC Thermal Resistance (°C/W) 150 IC - Collector Current (A) D=1 (D.C.) 100m DC 1s 100ms 10ms 1ms 100us 100 D=0.5 Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio 1 10 100 10m FMMT38A h FE FMMT38B FMMT38C 50 D=0.2 D=0.1 D=0.05 Single Pulse 500 1000 2000 4000 5000 10000 1m 0.1 1 10 100 100m 0 0.0001 0.001 0.01 Pulse Width (seconds) VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 101 3 - 100 
Maximum transient thermal impedance *Measured under pulsed conditions. Pulse width=300 s. Duty cycle Spice parameter data is available upon request for this device
1.5 Collector-Base Breakdown Voltage