FMMT415 FMMT417
TYPICAL CHARACTERISTICS
180 160 140
1. >4x10 Operations Without Failure 2. 10% Operations To Failure 3. 10! Operations To Failure
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417
FMMT415 FMMT417
C B E
40 30
- (A)
100 80 60 40 20 0 0 20 40 60 1. 2.
3.
- (A)
120
V+ = 250V
20 V+ = 200V 10
I
I
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MIN. 260 320 VCEO(sus) 100 6 0.1 10 0.1 0.5 0.9 15 25 25 40 8 MHz pF TYP. FMMT415 260 100 6 500 60 330 -55 to +150 MAX. UNIT V V V V
µA µA µA
20 40 60 80 100 120 140 160 180
SOT23 FMMT417 320 100 UNIT V V V mA A mW °C
80 100 120 140 160 180
0
-60 -40 -20 0
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (Pulse Width=20ns) Power Dissipation
Maximum Avalanche Current v Pulse Width
100 80 60 175°C V+- =10V 220 200
Pulse Width (ns)
Temperature (°C)
IUSB v Temperature for the specified conditions
- (V)
180 160
Risetime of Base Drive Current = 5mA/ns
Operating and Storage Temperature Range PARAMETER SYMBOL FMMT415 V(BR)CES FMMT417
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS. IC=1mA Tamb= -55 to +150°C IC=1mA IC=100µA IE=10µA VCB=180V VCB=180V, Tamb=100°C VEB=4V IC=10mA, IB=1mA* IC=10mA, IB=1mA* VC=200V, CCE=620pF VC=250V, CCE=620pF IC=10mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, IE=0 f=100MHz Collector-Base Breakdown Voltage
h
40 20 0
25°C -55°C
V
140 120
I* =50mA I* =100mA I* =200mA 1n 10n 100n
100µA
1mA
10mA
100mA
1A
100 100p
Collector Current
Collector-Emitter Capacitance (F)
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
hFE v IC
180 175 170 I* =60mA
Minimum starting voltage as a function of capacitance
160 150
Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) ISB hFE fT Ccb
V V A A
- (V)
165 160 155 150 145 1 C=620pF
- (V)
I* =100mA I* =200mA
140 C = 620pF 120
V
Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio
V
10
100 -60 -40 -20 0
20 40 60 80 100 120 140 160 180
Transition Frequency Collector-Base Capacitance
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage as a function of drive current
Minimum starting voltage as a function of temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 104
3 - 105
FMMT415 FMMT417
TYPICAL CHARACTERISTICS
180 160 140
1. >4x10 Operations Without Failure 2. 10% Operations To Failure 3. 10! Operations To Failure
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417
FMMT415 FMMT417
C B E
40 30
- (A)
100 80 60 40 20 0 0 20 40 60 1. 2.
3.
- (A)
120
V+ = 250V
20 V+ = 200V 10
I
I
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MIN. 260 320 VCEO(sus) 100 6 0.1 10 0.1 0.5 0.9 15 25 25 40 8 MHz pF TYP. FMMT415 260 100 6 500 60 330 -55 to +150 MAX. UNIT V V V V
µA µA µA
20 40 60 80 100 120 140 160 180
SOT23 FMMT417 320 100 UNIT V V V mA A mW °C
80 100 120 140 160 180
0
-60 -40 -20 0
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (Pulse Width=20ns) Power Dissipation
Maximum Avalanche Current v Pulse Width
100 80 60 175°C V+- =10V 220 200
Pulse Width (ns)
Temperature (°C)
IUSB v Temperature for the specified conditions
- (V)
180 160
Risetime of Base Drive Current = 5mA/ns
Operating and Storage Temperature Range PARAMETER SYMBOL FMMT415 V(BR)CES FMMT417
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS. IC=1mA Tamb= -55 to +150°C IC=1mA IC=100µA IE=10µA VCB=180V VCB=180V, Tamb=100°C VEB=4V IC=10mA, IB=1mA* IC=10mA, IB=1mA* VC=200V, CCE=620pF VC=250V, CCE=620pF IC=10mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, IE=0 f=100MHz Collector-Base Breakdown Voltage
h
40 20 0
25°C -55°C
V
140 120
I* =50mA I* =100mA I* =200mA 1n 10n 100n
100µA
1mA
10mA
100mA
1A
100 100p
Collector Current
Collector-Emitter Capacitance (F)
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
hFE v IC
180 175 170 I* =60mA
Minimum starting voltage as a function of capacitance
160 150
Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) ISB hFE fT Ccb
V V A A
- (V)
165 160 155 150 145 1 C=620pF
- (V)
I* =100mA I* =200mA
140 C = 620pF 120
V
Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio
V
10
100 -60 -40 -20 0
20 40 60 80 100 120 140 160 180
Transition Frequency Collector-Base Capacitance
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage as a function of drive current
Minimum starting voltage as a function of temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 104
3 - 105
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