FMMT451

FMMT451 TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT551 451 FMMT451 C B E IB1=IB2=IC/10 VCE=10V 0.8 ns 150 - (Volts) 0.6 IC/IB=10 tf Switching time ts 100 tr ns 800 0.4 td 50 ts tr ts 0 td 0.1 1 tf 600 V 0.2 400 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT V V V 0.1 0.1 0.35 1.1 50 10 150 15 150 MHz pF µA µA 200 VALUE 80 60 5 2 1 200 500 -55 to +150 CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=60V VEB=4V UNIT V V V A A mA mW °C 0 0 0.001 0.01 0.1 1 10 0.01 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.8 1.6 160 1.4 1.2 IC/IB=10 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo 80 60 5 120 - (Volts) VCE=2V 1.0 0.8 0.6 0.4 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). MIN. MAX. h 80 V 40 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.8 1.6 1.4 10 V V IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz - (Volts) 1.2 1.0 0.8 0.6 VCE=2V 1 DC 1s 100ms 10ms 1ms 100µs 0.1 V 0.4 0.2 0.01 0.001 0.01 0.1 1 10 0.1 1 10 100 Transition Frequency Output Capacitance IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 109 3 - 108 FMMT451 TYPICAL CHARACTERISTICS tf,tr,td SOT23 NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 400mΩ at 1A * 1 Amp continuous current * Ptot= 500 mW COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT551 451 FMMT451 C B E IB1=IB2=IC/10 VCE=10V 0.8 ns 150 - (Volts) 0.6 IC/IB=10 tf Switching time ts 100 tr ns 800 0.4 td 50 ts tr ts 0 td 0.1 1 tf 600 V 0.2 400 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT V V V 0.1 0.1 0.35 1.1 50 10 150 15 150 MHz pF µA µA 200 VALUE 80 60 5 2 1 200 500 -55 to +150 CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=60V VEB=4V UNIT V V V A A mA mW °C 0 0 0.001 0.01 0.1 1 10 0.01 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.8 1.6 160 1.4 1.2 IC/IB=10 Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo 80 60 5 120 - (Volts) VCE=2V 1.0 0.8 0.6 0.4 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). MIN. MAX. h 80 V 40 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.8 1.6 1.4 10 V V IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz - (Volts) 1.2 1.0 0.8 0.6 VCE=2V 1 DC 1s 100ms 10ms 1ms 100µs 0.1 V 0.4 0.2 0.01 0.001 0.01 0.1 1 10 0.1 1 10 100 Transition Frequency Output Capacitance IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 109 3 - 108