FMMT455

FMMT455 TYPICAL CHARACTERISTICS tf ns 900 tr tf 800 ts 6 ts µS 7 SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW PARTMARKING DETAIL – 455 FMMT455 C B E 0.4 ns 500 IB1=IB2=IC/10 VCE=10V 5 - (Volts) IC/IB=10 0.2 Switching time 0.3 400 700 tr 300 600 4 td 3 nS 100 2 200 500 0.1 100 400 td 1 50 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 160 140 5 2 1 200 500 -55 to +150 SOT23 UNIT V V V A A mA mW °C V 0 0 300 0.01 0.1 1 0 0 0.001 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 100 1.0 80 0.8 IC/IB=10 Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range - Normalised Gain (%) 60 - (Volts) VCE=10V 0.6 40 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC 1s 100ms 10ms 1ms 100µs 20 V 0.4 SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo MIN. MAX. 160 140 5 0.1 0.1 0.7 100 10 Typ 100 15 300 UNIT V V V µA µA CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=140V VEB=4V IC=150mA, IB=15mA IC=150mA, VCE=10V* IC=1A, VCE=10V* h 0.2 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse T est at Tamb=25°C 10 1.2 VCE=10V 1 - (Volts) 1.0 0.8 0.1 Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio 1 10 100 1000 V V 0.6 0.01 0.4 0.0001 0.001 0.01 0.1 1 0.001 0.1 Transition Frequency Output Capacitance MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 111 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 110 FMMT455 TYPICAL CHARACTERISTICS tf ns 900 tr tf 800 ts 6 ts µS 7 SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW PARTMARKING DETAIL – 455 FMMT455 C B E 0.4 ns 500 IB1=IB2=IC/10 VCE=10V 5 - (Volts) IC/IB=10 0.2 Switching time 0.3 400 700 tr 300 600 4 td 3 nS 100 2 200 500 0.1 100 400 td 1 50 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 160 140 5 2 1 200 500 -55 to +150 SOT23 UNIT V V V A A mA mW °C V 0 0 300 0.01 0.1 1 0 0 0.001 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 100 1.0 80 0.8 IC/IB=10 Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range - Normalised Gain (%) 60 - (Volts) VCE=10V 0.6 40 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC 1s 100ms 10ms 1ms 100µs 20 V 0.4 SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo MIN. MAX. 160 140 5 0.1 0.1 0.7 100 10 Typ 100 15 300 UNIT V V V µA µA CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=140V VEB=4V IC=150mA, IB=15mA IC=150mA, VCE=10V* IC=1A, VCE=10V* h 0.2 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC Single Pulse T est at Tamb=25°C 10 1.2 VCE=10V 1 - (Volts) 1.0 0.8 0.1 Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio 1 10 100 1000 V V 0.6 0.01 0.4 0.0001 0.001 0.01 0.1 1 0.001 0.1 Transition Frequency Output Capacitance MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 111 * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 110